AT45DB321E-MWHF2B-T

Product Overview

Category

AT45DB321E-MWHF2B-T belongs to the category of flash memory devices.

Use

It is primarily used for data storage and retrieval in various electronic devices.

Characteristics

• Non-volatile memory
• High-speed data transfer
• Low power consumption
• Wide operating voltage range
• Small form factor

Package

The AT45DB321E-MWHF2B-T is available in a surface mount 8-pin SOIC package.

Essence

This flash memory device is designed to provide reliable and efficient data storage capabilities for electronic systems.

Packaging/Quantity

The AT45DB321E-MWHF2B-T is typically packaged in reels, with each reel containing a specific quantity of devices.

Specifications

• Memory Size: 32 megabits (4 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage Range: 2.7V to 3.6V
• Data Transfer Rate: Up to 85 MHz
• Erase/Program Cycle Endurance: 10,000 cycles
• Data Retention: Up to 20 years
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground reference
3. SI: Serial input for data transfer
4. SO: Serial output for data transfer
5. WP: Write protect control input
6. HOLD: Hold control input
7. SCK: Serial clock input
8. CS: Chip select input

Functional Features

• Page Program Operation: Allows individual bytes or full pages to be programmed
• Sector Erase Operation: Erases a specified sector of memory
• Block Erase Operation: Erases a specified block of memory
• Chip Erase Operation: Erases the entire memory array
• Continuous Read Mode: Enables sequential reading of data
• Deep Power-down Mode: Reduces power consumption when the device is not in use

Advantages and Disadvantages

Advantages

• High-speed data transfer enables quick access to stored information
• Low power consumption prolongs battery life in portable devices
• Wide operating voltage range ensures compatibility with various systems
• Small form factor allows for integration into compact designs

Disadvantages

• Limited erase/program cycle endurance may affect long-term reliability
• Higher cost compared to other non-volatile memory options
• Requires a dedicated SPI interface for communication

Working Principles

The AT45DB321E-MWHF2B-T utilizes a combination of floating gate and control gate transistors to store and retrieve data. When programming, electrons are trapped in the floating gate, altering the transistor's threshold voltage. This change in threshold voltage represents a logical "1" or "0". During read operations, the stored charge is sensed, allowing the retrieval of the stored data.

Detailed Application Field Plans

The AT45DB321E-MWHF2B-T finds applications in various electronic devices, including but not limited to: - Consumer electronics (e.g., smartphones, tablets) - Automotive systems (e.g., infotainment systems, instrument clusters) - Industrial equipment (e.g., data loggers, control systems) - Medical devices (e.g., patient monitoring systems, diagnostic equipment)

Detailed and Complete Alternative Models

1. AT45DB321D-MU
2. AT45DB321D-SU
3. AT45DB321D-CNU
4. AT45DB321D-CNU-SL383
5. AT45DB321D-CNU-SL383R

These alternative models offer similar functionality and specifications to the AT45DB321E-MWHF2B-T, providing options for different application requirements.

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