AS4C16M16D1-5BINTR

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory module
• Characteristics:
  • High-speed performance
  • Low power consumption
  • Compact package size
• Package: BGA (Ball Grid Array)
• Essence: Dynamic Random Access Memory (DRAM)
• Packaging/Quantity: Tray, 250 units per tray

Specifications

• Part Number: AS4C16M16D1-5BINTR
• Organization: 16M words x 16 bits x 1 bank
• Voltage Supply: 2.5V ± 0.2V
• Speed Grade: -5
• Operating Temperature Range: -40°C to +85°C
• Refresh Mode: Auto-refresh and self-refresh
• Interface: Parallel
• Data Rate: 200 MHz
• Burst Length: 1, 2, 4, 8, full page
• CAS Latency: 3, 4, 5

Detailed Pin Configuration

The AS4C16M16D1-5BINTR IC has a total of 60 pins arranged in a specific configuration. The pinout is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS0
38. /CS1
39. /CS2
40. /CS3
41. /CS4
42. /CS5
43. /CS6
44. /CS7
45. /CKE
46. /CLK
47. /DQM0
48. /DQM1
49. VSS
50. VSS
51. VSS
52. VSS
53. VSS
54. VSS
55. VSS
56. VSS
57. VSS
58. VSS
59. VSS
60. VSS

Functional Features

• High-speed data transfer
• Low power consumption
• Auto-refresh and self-refresh modes for efficient memory management
• Burst mode support for faster access times
• Multiple chip select options for flexible system integration

Advantages

• Fast data transfer rate enhances overall system performance
• Low power consumption helps conserve energy
• Compact package size saves valuable board space
• Wide operating temperature range allows usage in various environments
• Versatile burst length and CAS latency options provide flexibility in system design

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit of storage compared to alternative memory solutions
• Vulnerable to data loss in case of power failure without proper backup measures

Working Principles

The AS4C16M16D1-5BINTR is a dynamic random access memory (DRAM) module that stores and retrieves digital information using an array of capacitors. Each capacitor represents a memory cell, and the data is stored as charge in these capacitors. To access the data, the memory controller sends specific commands and addresses to the IC, which activates the corresponding memory cells and transfers the data through the data pins.

Detailed Application Field Plans

The AS4C16M16D1-5BINTR memory module finds applications in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers and data centers - Networking equipment - Embedded systems - Consumer electronics

Detailed and Complete Alternative Models

• AS4C16M16D1-5BCNTR
• AS4C16M16D1-5BCN
• AS4C16M16D1-5BIN
• AS4C16M16D1-5BCNINTR
• AS4C16M16D1-5BCNTRT
• AS4C16M16D1-5BCNTRTIN

(Note: The above list is not exhaustive and there may be other alternative models available in the market