AS4C2M32S-6BINTR

Product Overview

Category

AS4C2M32S-6BINTR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed performance: AS4C2M32S-6BINTR offers fast data access and transfer rates, enhancing overall system performance.
• Large storage capacity: With a capacity of 2 megabytes (MB), this memory module can store a significant amount of data.
• Low power consumption: AS4C2M32S-6BINTR is designed to operate efficiently with minimal power consumption.
• Compact package: The product comes in a compact form factor, making it suitable for integration into various electronic devices.
• Reliable operation: AS4C2M32S-6BINTR ensures reliable data storage and retrieval, minimizing the risk of data loss or corruption.

Package and Quantity

AS4C2M32S-6BINTR is typically packaged in a small outline integrated circuit (SOIC) package. Each package contains one unit of the memory module.

Specifications

• Part Number: AS4C2M32S-6BINTR
• Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
• Organization: 2 Megabytes x 32 bits
• Speed Grade: 6
• Operating Voltage: 3.3V
• Interface: Parallel
• Clock Frequency: 166 MHz
• Refresh Rate: 8K cycles/32 ms
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The AS4C2M32S-6BINTR memory module has a total of 66 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. DQ16
21. DQ17
22. DQ18
23. DQ19
24. DQ20
25. DQ21
26. DQ22
27. DQ23
28. VSS
29. DQ24
30. DQ25
31. DQ26
32. DQ27
33. DQ28
34. DQ29
35. DQ30
36. DQ31
37. VSS
38. A0
39. A1
40. A2
41. A3
42. A4
43. A5
44. A6
45. A7
46. VSS
47. A8
48. A9
49. A10
50. A11
51. A12
52. A13
53. A14
54. A15
55. VSS
56. A16
57. A17
58. A18
59. A19
60. A20
61. A21
62. A22
63. A23
64. VSS
65. /CAS
66. /RAS

Functional Features

• Random Access: AS4C2M32S-6BINTR allows for random access to any location within the memory, enabling efficient data retrieval.
• Burst Mode: The memory module supports burst mode operation, allowing for consecutive data transfers without the need for repeated address input.
• Auto Refresh: AS4C2M32S-6BINTR automatically performs periodic refresh operations to maintain data integrity.
• Low Latency: The product offers low latency access, minimizing delays in data retrieval.

Advantages and Disadvantages

Advantages

• High-speed performance enhances overall system responsiveness.
• Large storage capacity accommodates a significant amount of data.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates integration into various electronic devices.
• Reliable operation ensures data integrity.

Disadvantages

• Limited compatibility with certain older systems that do not support parallel interface memory modules.
• Relatively higher cost compared to other memory technologies.

Working Principles

AS4C2M32S-6BINTR operates based on synchronous dynamic random access memory (SDRAM) technology. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The memory cells are organized in rows and columns, and data