AS4C2M32S-6TINTR

Product Overview

Category

AS4C2M32S-6TINTR belongs to the category of semiconductor memory products.

Use

It is primarily used as a storage component in electronic devices such as computers, smartphones, and other digital systems.

Characteristics

• AS4C2M32S-6TINTR is a high-density memory module with a capacity of 2 megabits.
• It operates at a speed of 6 nanoseconds, making it suitable for applications requiring fast data access.
• The product is designed to be compatible with various electronic systems and can be easily integrated into existing designs.

Package

AS4C2M32S-6TINTR is available in a compact and durable package that ensures protection against physical damage and environmental factors. The package is designed to facilitate easy installation and replacement.

Essence

The essence of AS4C2M32S-6TINTR lies in its ability to store and retrieve data quickly and reliably, contributing to the overall performance and functionality of electronic devices.

Packaging/Quantity

AS4C2M32S-6TINTR is typically packaged individually or in bulk quantities, depending on the requirements of the customer or manufacturer.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 2 Megabits x 32 bits
• Operating Voltage: 3.3V
• Access Time: 6 nanoseconds
• Interface: Parallel
• Package Type: Tin Tray

Detailed Pin Configuration

The pin configuration of AS4C2M32S-6TINTR is as follows:

1. Vcc
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. DQ16
19. DQ17
20. DQ18
21. DQ19
22. DQ20
23. DQ21
24. DQ22
25. DQ23
26. DQ24
27. DQ25
28. DQ26
29. DQ27
30. DQ28
31. DQ29
32. DQ30
33. DQ31
34. /WE
35. /OE
36. A0
37. A1
38. A2
39. A3
40. A4
41. A5
42. A6
43. A7
44. A8
45. A9
46. A10
47. A11
48. A12
49. A13
50. A14
51. A15
52. /CE1
53. /CE2
54. /CE3
55. /CE4
56. /CE5
57. /CE6
58. /CE7
59. /CE8
60. Vss

Functional Features

• Fast data access: AS4C2M32S-6TINTR offers a low access time of 6 nanoseconds, enabling quick retrieval and storage of data.
• High-density storage: With a capacity of 2 megabits, this memory module provides ample space for storing large amounts of data.
• Compatibility: The product is designed to be compatible with various electronic systems, making it versatile and easy to integrate into different applications.
• Reliable performance: AS4C2M32S-6TINTR ensures reliable and stable performance, contributing to the overall functionality of electronic devices.

Advantages and Disadvantages

Advantages

• Fast data access speed
• High-density storage capacity
• Compatibility with various electronic systems
• Reliable performance

Disadvantages

• Limited storage capacity compared to higher-capacity memory modules
• Higher cost per megabit compared to lower-density alternatives

Working Principles

AS4C2M32S-6TINTR operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The memory cells within the module use flip-flops to store binary data as electrical charges. These charges are maintained as long as power is supplied to the module, allowing for fast and efficient data access.

Detailed Application Field Plans

AS4C2M32S-6TINTR finds application in various electronic devices and systems, including but not limited to: - Computers and laptops - Smartphones and tablets