AS4C8M16SA-6BANTR

Product Overview

Category

AS4C8M16SA-6BANTR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

It is primarily used as a main memory component in various electronic devices such as computers, servers, and embedded systems.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Supports fast read and write operations
• Compact form factor for easy integration into electronic devices

Package

AS4C8M16SA-6BANTR is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of AS4C8M16SA-6BANTR lies in its ability to provide efficient and reliable data storage and retrieval functions for electronic devices.

Packaging/Quantity

Typically, AS4C8M16SA-6BANTR is packaged individually and sold in quantities of one or more, depending on the requirements of the customer.

Specifications

• Part Number: AS4C8M16SA-6BANTR
• Memory Type: DDR3 SDRAM
• Capacity: 8 Megabytes (MB)
• Organization: 8M words x 16 bits
• Speed: 6 nanoseconds (ns)
• Voltage: 1.5 volts (V)
• Interface: 204-pin SODIMM
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of AS4C8M16SA-6BANTR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VDD
38. /RAS
39. /CAS
40. /WE
41. BA0
42. BA1
43. VSS
44. /CS
45. DM0
46. DM1
47. VREF
48. VSS

Functional Features

• High-speed data transfer rate for improved system performance
• Low power consumption for energy efficiency
• Error correction capabilities for enhanced reliability
• Support for various memory management features
• Compatibility with industry-standard interfaces and protocols

Advantages and Disadvantages

Advantages

• Fast data access and retrieval speeds
• Large storage capacity
• Compact form factor for easy integration
• Error correction capabilities enhance data reliability
• Compatible with industry standards

Disadvantages

• Volatile memory requires constant power supply
• Relatively higher cost compared to other memory technologies
• Limited lifespan due to the finite number of read/write cycles

Working Principles

AS4C8M16SA-6BANTR operates based on the principles of dynamic random-access memory (DRAM). It stores data in capacitors within the memory cells, which are periodically refreshed to maintain the stored information. When a read or write operation is performed, the memory controller sends appropriate signals to access the desired memory location.

Detailed Application Field Plans

AS4C8M16SA-6BANTR finds applications in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers - Workstations - Embedded systems - Networking equipment - Industrial automation systems

Detailed and Complete Alternative Models

Some alternative models to AS4C8M16SA-6BANTR include: - AS4C8M16S-6BCN (DDR3 SDRAM, 8MB capacity) - AS4C8M16S-6BIN (DDR3 SDRAM, 8MB capacity) - AS4C8M16S-6BGN (DDR3 SDRAM, 8MB capacity) - AS4C8M16S-6BEN (DDR3 SDRAM, 8MB capacity)

These alternative models offer similar specifications and functionality, providing options for different