BLP10H630PGY

Product Overview

BLP10H630PGY belongs to the category of high-power RF transistors. It is commonly used in radio frequency (RF) power amplifiers for various applications, characterized by its high power handling capability and efficiency. The package type for BLP10H630PGY is a ceramic/glass package, and it is typically sold in quantities of one or more.

Specifications

• Frequency Range: 400-2700 MHz
• Output Power: 10W
• Gain: 13 dB
• Efficiency: 55%
• Package Type: Ceramic/Glass
• Quantity: Single or Multiple Units

Detailed Pin Configuration

The detailed pin configuration for BLP10H630PGY includes input, output, and bias pins, which are essential for proper integration into RF amplifier circuits.

Functional Features

BLP10H630PGY offers high power amplification with good linearity and efficiency, making it suitable for various RF power amplifier applications. It also exhibits good thermal stability and ruggedness.

Advantages and Disadvantages

Advantages

• High power handling capability
• Good linearity and efficiency
• Thermal stability
• Ruggedness

Disadvantages

• Limited frequency range
• Higher cost compared to lower power alternatives

Working Principles

BLP10H630PGY operates based on the principles of RF power amplification, where it takes a low-power RF signal as input and amplifies it to a higher power level while maintaining linearity and efficiency.

Detailed Application Field Plans

BLP10H630PGY finds applications in various fields such as: - Cellular base stations - Wireless infrastructure - Radar systems - Test equipment - Satellite communication

Detailed and Complete Alternative Models

Some alternative models to BLP10H630PGY include: - BLP7G22S-130 - BLP9H9L500P - BLP15H9L500P

In conclusion, BLP10H630PGY is a high-power RF transistor with specific characteristics and functional features that make it suitable for various RF power amplifier applications across different industries.

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