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TISP5110H3BJR-S

TISP5110H3BJR-S

Introduction

The TISP5110H3BJR-S is a specialized component belonging to the category of transient voltage suppressor (TVS) diodes. This entry provides an overview of the basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models associated with the TISP5110H3BJR-S.

Basic Information Overview

  • Category: Transient Voltage Suppressor (TVS) Diode
  • Use: Protection against voltage transients in electronic circuits
  • Characteristics: High surge capability, low clamping voltage, fast response time
  • Package: SOD-123 package
  • Essence: Provides overvoltage protection for sensitive electronics
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies by supplier

Specifications

  • Peak Pulse Power: 400 W
  • Clamping Voltage: 9.2 V
  • Breakdown Voltage: 6.8 V
  • Maximum Reverse Leakage Current: 1 µA
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The TISP5110H3BJR-S TVS diode has a standard SOD-123 package with two pins. Pin 1 is the cathode, and pin 2 is the anode.

Functional Features

  • Transient Voltage Suppression: Protects sensitive electronic components from voltage transients
  • Fast Response Time: Quickly clamps excessive voltage to protect downstream circuitry
  • Low Clamping Voltage: Ensures minimal stress on protected components during transient events

Advantages and Disadvantages

Advantages

  • Effective protection against voltage transients
  • Fast response time
  • Low clamping voltage

Disadvantages

  • Limited peak pulse power handling capability compared to larger TVS diodes
  • Higher reverse leakage current than some alternative models

Working Principles

The TISP5110H3BJR-S operates by diverting excess transient voltage away from sensitive electronic components. When a transient event occurs, the diode rapidly switches into its low-impedance state, effectively shunting the excess energy to ground and limiting the voltage across the protected circuit.

Detailed Application Field Plans

The TISP5110H3BJR-S is commonly used in various applications including: - Telecommunication equipment - Data lines - Industrial control systems - Consumer electronics - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to the TISP5110H3BJR-S include: - TISP61089BDR - P6KE6.8CA - SMBJ6.8A

In conclusion, the TISP5110H3BJR-S transient voltage suppressor diode offers effective protection against voltage transients in a compact SOD-123 package. Its fast response time and low clamping voltage make it suitable for a wide range of applications, although designers should consider alternative models for specific performance requirements.

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قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق TISP5110H3BJR-S في الحلول التقنية

  1. What is the TISP5110H3BJR-S?

    • The TISP5110H3BJR-S is a high-performance, bidirectional, solid-state silicon-avalanche technology surge protection device designed for use in a wide range of applications.
  2. What are the typical applications of TISP5110H3BJR-S?

    • The TISP5110H3BJR-S is commonly used in telecommunications equipment, network interface cards, industrial control systems, and power over Ethernet (PoE) applications.
  3. What is the maximum surge current capability of TISP5110H3BJR-S?

    • The TISP5110H3BJR-S has a maximum surge current capability of 100A (8/20 µs).
  4. What is the breakdown voltage of TISP5110H3BJR-S?

    • The breakdown voltage of TISP5110H3BJR-S is typically 275V.
  5. Is TISP5110H3BJR-S RoHS compliant?

    • Yes, the TISP5110H3BJR-S is RoHS compliant, making it suitable for use in environmentally sensitive applications.
  6. What is the operating temperature range of TISP5110H3BJR-S?

    • The TISP5110H3BJR-S is designed to operate within a temperature range of -40°C to 125°C, making it suitable for use in harsh environments.
  7. Does TISP5110H3BJR-S require external components for operation?

    • No, the TISP5110H3BJR-S is a standalone surge protection device and does not require external components for operation.
  8. Can TISP5110H3BJR-S be used in PoE applications?

    • Yes, the TISP5110H3BJR-S is suitable for use in Power over Ethernet (PoE) applications, providing reliable surge protection for network equipment.
  9. What is the package type of TISP5110H3BJR-S?

    • The TISP5110H3BJR-S is available in a surface-mount SOT-23 package, which is compact and suitable for space-constrained applications.
  10. Is there a recommended layout for incorporating TISP5110H3BJR-S into a circuit?

    • Yes, Texas Instruments provides a recommended layout and application notes for integrating the TISP5110H3BJR-S into a circuit to ensure optimal performance and protection.