1.5CE100A BK
Product Category: Semiconductor Devices
Basic Information Overview: - Category: Power Transistor - Use: Amplification and switching of electrical signals - Characteristics: High voltage capability, low saturation voltage, fast switching speed - Package: TO-220AB - Essence: Silicon NPN power transistor - Packaging/Quantity: Bulk packaging, 50 pieces per pack
Specifications: - Collector-Emitter Voltage (VCEO): 1500V - Collector Current (IC): 1.5A - DC Current Gain (hFE): 15-60 - Power Dissipation (PD): 25W - Transition Frequency (fT): 4MHz
Detailed Pin Configuration: - Pin 1 (Base): Input for controlling the transistor's operation - Pin 2 (Collector): Connects to the positive supply voltage - Pin 3 (Emitter): Output for the amplified or switched signal
Functional Features: - High voltage capability allows for use in high-power applications - Low saturation voltage minimizes power loss during operation - Fast switching speed enables rapid response in switching applications
Advantages: - Suitable for high voltage applications - Low power dissipation - Fast switching speed
Disadvantages: - Limited current handling capacity compared to higher-rated transistors - Narrow range of DC current gain
Working Principles: The 1.5CE100A BK operates as a silicon NPN power transistor, amplifying or switching electrical signals based on the input at the base terminal. When a small current is applied to the base, it controls the larger current flow between the collector and emitter terminals.
Detailed Application Field Plans: - Industrial power supplies - Motor control circuits - Electronic ballasts - Inverters and converters
Detailed and Complete Alternative Models: - 2N3055 - MJ15003 - TIP31C
This comprehensive entry provides an in-depth understanding of the 1.5CE100A BK semiconductor device, covering its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
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