FM21L16-60-TG

Product Overview

Category: Integrated Circuits (ICs)

Use: The FM21L16-60-TG is a high-performance ferroelectric random access memory (FRAM) IC. It is designed to store and retrieve data in electronic devices.

Characteristics: - Non-volatile memory - High-speed read/write operations - Low power consumption - High endurance - Radiation-resistant

Package: The FM21L16-60-TG is available in a small outline package (SOP) with 8 pins.

Essence: This IC utilizes ferroelectric material to store data, providing non-volatile memory capabilities combined with fast read/write operations.

Packaging/Quantity: The FM21L16-60-TG is typically packaged in reels or tubes, with a quantity of 2500 units per reel/tube.

Specifications

• Memory Size: 2 Megabits (256K x 8 bits)
• Operating Voltage: 2.7V - 3.6V
• Access Time: 60 ns
• Data Retention: 10 years
• Endurance: 10^14 read/write cycles
• Operating Temperature Range: -40°C to +85°C

Pin Configuration

The FM21L16-60-TG has the following pin configuration:

```

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| | 1 | /CS | 8 Vcc 2 | SCK | 7 NC 3 | SI | 6 SO 4 | GND | 5 HOLD |___________| ```

Functional Features

• Non-volatile storage: The FM21L16-60-TG retains data even when power is disconnected.
• High-speed operation: It offers fast read and write access times, allowing for efficient data handling.
• Low power consumption: The IC consumes minimal power during operation, making it suitable for battery-powered devices.
• High endurance: With a read/write cycle endurance of 10^14, the FM21L16-60-TG ensures long-lasting performance.
• Radiation-resistant: It is designed to withstand radiation, making it suitable for use in aerospace and other high-radiation environments.

Advantages and Disadvantages

Advantages: - Non-volatile memory ensures data retention even during power loss. - Fast read/write operations enable quick data access and storage. - Low power consumption prolongs battery life in portable devices. - High endurance guarantees long-term reliability. - Radiation resistance makes it suitable for specialized applications.

Disadvantages: - Relatively small memory size compared to other storage options. - Higher cost compared to traditional memory technologies.

Working Principles

The FM21L16-60-TG utilizes ferroelectric material to store data. Unlike conventional memory technologies, which rely on charge accumulation, FRAM uses polarization reversal to represent binary data. This allows for non-volatile storage with fast read/write capabilities. The ferroelectric material retains its polarization state even when power is disconnected, ensuring data integrity.

Detailed Application Field Plans

The FM21L16-60-TG can be used in various applications, including: 1. Industrial control systems 2. Automotive electronics 3. Medical devices 4. Aerospace and defense equipment 5. Consumer electronics

In industrial control systems, the FM21L16-60-TG can be utilized for storing critical data such as configuration settings, calibration values, and event logs. In automotive electronics, it can be employed for storing vehicle parameters, sensor data, and firmware updates. Medical devices can benefit from its non-volatile memory for storing patient information, device settings, and event logs. Aerospace and defense equipment can utilize the FM21L16-60-TG for mission-critical data storage in harsh environments. In consumer electronics, it can be used for applications such as smart meters, wearables, and IoT devices.

Detailed and Complete Alternative Models

1. FM21L16-50-TG: Similar to FM21L16-60-TG but with a 50 ns access time.
2. FM21L16-70-TG: Similar to FM21L16-60-TG but with a 70 ns access time.
3. FM21L16-80-TG: Similar to FM21L16-60-TG but with an 80 ns access time.
4. FM21L16-90-TG: Similar to FM21L16-60-TG but with a 90 ns access time.

These alternative models provide different access times to suit specific application requirements while maintaining similar functionality and characteristics.

In conclusion, the FM21L16-60-TG is a high-performance ferroelectric random access memory IC that offers non-volatile storage, fast read/write operations, low power consumption, high endurance, and radiation resistance