2N7002DWQ-7-F

Product Category: Electronic Component

Basic Information Overview: - Category: MOSFET Transistor - Use: Switching and Amplification in electronic circuits - Characteristics: Small size, low power consumption, high switching speed - Package: SOT-363 - Essence: Enhances circuit performance and efficiency - Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications: - Drain-Source Voltage (Vdss): 60V - Continuous Drain Current (Id): 115mA - Power Dissipation (Pd): 200mW - Threshold Voltage (Vgs): 1-2V - On-State Resistance (Rds(on)): 5 Ohms

Detailed Pin Configuration: - Pin 1 (Source) - Pin 2 (Gate) - Pin 3 (Drain)

Functional Features: - Fast switching speed - Low gate drive voltage - Low input capacitance

Advantages: - Small form factor - Low power consumption - High switching speed

Disadvantages: - Limited maximum current handling capability - Sensitivity to static electricity

Working Principles: The 2N7002DWQ-7-F operates based on the field-effect transistor principle, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans: - Used in low-power switching applications - Integrated into amplification circuits - Employed in battery-operated devices due to low power consumption

Detailed and Complete Alternative Models: - 2N7002 - AO3400 - BSS138

This MOSFET transistor, 2N7002DWQ-7-F, is a versatile component widely used in various electronic applications due to its compact size, low power consumption, and high switching speed. Its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models make it an essential part of modern electronic design.

[Word Count: 271]