BSS138DWQ-13

Product Overview

Category

The BSS138DWQ-13 belongs to the category of small-signal field-effect transistors (FETs).

Use

It is commonly used for switching and amplification applications in electronic circuits.

Characteristics

• Low on-resistance
• High input impedance
• Low power consumption

Package

The BSS138DWQ-13 is typically available in a SOT-363 package.

Essence

This FET is essential for controlling the flow of current in various electronic devices and circuits.

Packaging/Quantity

It is usually supplied in reels with a quantity of 3000 units per reel.

Specifications

• Drain-Source Voltage (Vdss): 50V
• Continuous Drain Current (Id): 200mA
• Total Power Dissipation (Pd): 225mW
• Gate-Source Voltage (Vgs): ±20V
• On-Resistance (Rds(on)): 1.5Ω

Detailed Pin Configuration

The BSS138DWQ-13 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Fast switching speed
• Low input capacitance
• High voltage capability

Advantages

• Small form factor
• Low power consumption
• Suitable for low-voltage applications

Disadvantages

• Limited maximum current handling capability
• Sensitivity to static electricity

Working Principles

The BSS138DWQ-13 operates based on the principle of field-effect modulation, where the voltage applied to the gate terminal controls the conductivity between the drain and source terminals.

Detailed Application Field Plans

1. Switching Circuits: Used to control the flow of current in digital and analog switching circuits.
2. Amplification Circuits: Employed as an active component in signal amplification stages.
3. Voltage Regulators: Integrated into voltage regulation circuits for efficient power management.

Detailed and Complete Alternative Models

1. 2N7002DWQ-13: Similar small-signal FET with comparable specifications.
2. DMG2302U-7: Ultra-low on-resistance FET suitable for high-current applications.
3. BS170DWQ-13: Small-signal FET with enhanced voltage handling capabilities.

In conclusion, the BSS138DWQ-13 is a versatile small-signal FET with excellent characteristics for various electronic applications, especially those requiring low power consumption and efficient switching capabilities.

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