FHN26G1 Product Overview

Introduction

The FHN26G1 is a semiconductor device belonging to the category of power MOSFETs. This product is widely used in various electronic applications due to its unique characteristics and functional features.

Basic Information Overview

• Category: Power MOSFET
• Use: Electronic applications requiring high power switching
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: TO-220AB
• Essence: Efficient power management
• Packaging/Quantity: Typically sold in reels of 1000 units

Specifications

• Voltage Rating: 100V
• Current Rating: 30A
• On-Resistance: 25mΩ
• Gate Charge: 38nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The FHN26G1 follows the standard pin configuration for a TO-220AB package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• High Voltage Capability: Allows for use in high-power applications
• Low On-Resistance: Minimizes power loss and heat generation
• Fast Switching Speed: Enables efficient power management and control

Advantages and Disadvantages

Advantages

• High voltage capability suitable for diverse applications
• Low on-resistance for improved efficiency
• Fast switching speed for precise power control

Disadvantages

• Higher cost compared to lower-rated MOSFETs
• Requires careful handling due to sensitivity to static electricity

Working Principles

The FHN26G1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The FHN26G1 finds extensive use in the following application fields: - Switching power supplies - Motor control - Inverters - LED lighting - Audio amplifiers

Detailed and Complete Alternative Models

For applications requiring similar specifications and performance, alternative models to the FHN26G1 include: - IRF1010E - STP55NF06L - FQP30N06L

In conclusion, the FHN26G1 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an ideal choice for various electronic applications requiring efficient power management and control.

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