MB85RS2MTPH-G-JNE1

Product Overview

Category: Memory ICs
Use: Non-volatile RAM (Random Access Memory)
Characteristics: High-speed, low-power, and non-volatile memory solution
Package: SOP (Small Outline Package)
Essence: Ferroelectric Random Access Memory (FRAM) technology
Packaging/Quantity: Tape and reel packaging, 3000 units per reel

Specifications

• Memory Size: 2 Mbit
• Interface: SPI (Serial Peripheral Interface)
• Operating Voltage: 1.8V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Over 10 years
• Endurance: 10^12 read/write cycles
• Write Time: 150 μs (typical)
• Standby Current: 50 μA (typical)

Detailed Pin Configuration

The MB85RS2MTPH-G-JNE1 has a total of 8 pins:

1. VCC: Power supply voltage
2. GND: Ground
3. HOLD: Hold input for suspending the serial communication
4. WP: Write protect input for protecting data from being overwritten
5. SCK: Serial clock input for synchronizing data transfer
6. SI: Serial data input for transferring data to the device
7. SO: Serial data output for reading data from the device
8. CS: Chip select input for enabling the device

Functional Features

• Non-volatile memory: Data is retained even when power is disconnected
• High-speed operation: Allows fast read and write access
• Low power consumption: Reduces energy usage and extends battery life
• High endurance: Supports a large number of read and write cycles
• Wide operating temperature range: Suitable for various environments
• Small form factor: Compact package size for space-constrained applications

Advantages and Disadvantages

Advantages: - Non-volatile memory ensures data integrity - High-speed operation improves system performance - Low power consumption reduces energy costs - Wide operating temperature range enables versatile usage - Small form factor allows integration into compact designs

Disadvantages: - Limited memory capacity compared to other storage solutions - Relatively higher cost per bit compared to traditional RAM

Working Principles

The MB85RS2MTPH-G-JNE1 utilizes Ferroelectric Random Access Memory (FRAM) technology. FRAM combines the advantages of both non-volatile memory and RAM. It stores data by utilizing the polarization of ferroelectric material, which can be electrically switched between two stable states. This allows for high-speed read and write operations with low power consumption.

Detailed Application Field Plans

The MB85RS2MTPH-G-JNE1 is suitable for a wide range of applications, including:

1. Industrial Control Systems: Used for storing critical data in PLCs (Programmable Logic Controllers) and industrial automation systems.
2. Smart Meters: Enables reliable and secure data storage in electricity, gas, and water meters.
3. Automotive Electronics: Provides non-volatile memory for storing configuration data, event logs, and sensor readings in automotive systems.
4. Medical Devices: Used in medical equipment for storing patient data, device settings, and event logs.
5. Internet of Things (IoT): Supports data logging and parameter storage in IoT devices such as sensors, wearables, and smart home appliances.

Detailed and Complete Alternative Models

1. MB85RS2MTA: 2 Mbit FRAM with I2C interface
2. MB85RS2MTPA: 2 Mbit FRAM with SPI interface and extended temperature range
3. MB85RS2MTSA: 2 Mbit FRAM with SPI interface and enhanced security features
4. MB85RS2MTYA: 2 Mbit FRAM with SPI interface and automotive-grade qualification

These alternative models offer similar functionality but may have different interfaces, temperature ranges, or additional features to cater to specific application requirements.

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