Encyclopedia Entry: 71V416L10BEG

Product Information Overview

Category: Integrated Circuit (IC)

Use: The 71V416L10BEG is a high-speed, low-power CMOS static random access memory (SRAM) IC. It is designed for use in various electronic devices and systems that require fast and reliable data storage.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Easy integration into existing circuitry - Reliable data retention

Package: The 71V416L10BEG is available in a 44-pin plastic thin small outline package (TSOP). This package provides protection to the IC and facilitates easy installation onto printed circuit boards.

Essence: The essence of the 71V416L10BEG lies in its ability to provide fast and efficient data storage in electronic devices, enhancing their overall performance.

Packaging/Quantity: Each package contains one 71V416L10BEG IC.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 4 Megabit x 16-bit
• Supply Voltage: 3.3V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Package Type: 44-pin TSOP

Detailed Pin Configuration

The 71V416L10BEG IC has a total of 44 pins. The pin configuration is as follows:

1. A0-A18: Address Inputs
2. DQ0-DQ15: Data Inputs/Outputs
3. WE: Write Enable
4. OE: Output Enable
5. CE1, CE2: Chip Enables
6. VCC: Power Supply
7. GND: Ground

(Note: The remaining pins are not listed here for brevity.)

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low power consumption ensures efficient energy usage.
• Large storage capacity of 4 Megabits accommodates substantial amounts of data.
• Easy integration into existing circuitry simplifies the design process.
• Reliable data retention guarantees the preservation of stored information.

Advantages and Disadvantages

Advantages: - Fast operation enhances overall system performance. - Low power consumption prolongs battery life in portable devices. - Large storage capacity meets the demands of data-intensive applications. - Easy integration reduces development time and costs. - Reliable data retention ensures data integrity.

Disadvantages: - Limited compatibility with certain older systems that require different memory types. - Higher cost compared to lower-capacity memory options. - Sensitivity to electrostatic discharge (ESD) requires proper handling during installation.

Working Principles

The 71V416L10BEG operates based on the principles of static random access memory (SRAM). It stores data using flip-flop circuits, which retain information as long as power is supplied. When an address is provided, the IC retrieves the corresponding data from its memory cells and outputs it through the data pins.

Detailed Application Field Plans

The 71V416L10BEG finds application in various electronic devices and systems, including but not limited to: - Personal computers - Servers - Networking equipment - Telecommunications devices - Consumer electronics - Automotive electronics

Detailed and Complete Alternative Models

1. 71V416L15PHI: Similar to 71V416L10BEG, but with a higher access time of 15 ns.
2. 71V416S10PHI: A low-power variant of 71V416L10BEG with reduced power consumption.
3. 71V416S15PHI: Similar to 71V416S10PHI, but with a higher access time of 15 ns.

(Note: The list above provides only a few alternative models for reference.)

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