The BSP62E6327HTSA1 is a high-performance NPN bipolar junction transistor (BJT) belonging to the semiconductor category. This device is commonly used in various electronic applications due to its unique characteristics and functional features.
The BSP62E6327HTSA1 transistor offers the following specifications: - Maximum Collector-Base Voltage: 80V - Maximum Collector Current: 1A - Power Dissipation: 1.5W - Transition Frequency: 300MHz - Noise Figure: 3dB
The BSP62E6327HTSA1 features a standard SOT89 package with the following pin configuration: 1. Base (B) 2. Emitter (E) 3. Collector (C)
The BSP62E6327HTSA1 operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its three terminals to amplify or switch electronic signals.
This transistor is widely used in the following application fields: - Radio frequency (RF) amplifiers - Oscillator circuits - Signal processing systems - Communication equipment
Some alternative models to the BSP62E6327HTSA1 include: - BC547B - 2N3904 - 2SC3356 - MMBT3904
In conclusion, the BSP62E6327HTSA1 is a versatile semiconductor device with high-frequency capabilities, making it suitable for various electronic applications requiring amplification and signal processing.
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Is BSP62E6327HTSA1 RoHS compliant?
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Does BSP62E6327HTSA1 have built-in protection features?
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