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IPB034N06N3GATMA1

IPB034N06N3GATMA1

Product Overview

Category

The IPB034N06N3GATMA1 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as in voltage regulation and power conversion circuits.

Characteristics

  • High power handling capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate charge

Package

The IPB034N06N3GATMA1 is typically available in a TO-263 package.

Essence

This MOSFET is essential for efficient power control and management in various electronic devices and systems.

Packaging/Quantity

It is usually supplied in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 50A
  • On-State Resistance (RDS(on)): 3.4mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 45nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB034N06N3GATMA1 typically has three pins: 1. Drain (D) 2. Source (S) 3. Gate (G)

Functional Features

  • High current-carrying capability
  • Low conduction losses
  • Fast switching characteristics
  • Suitable for high-frequency operation

Advantages

  • Efficient power dissipation
  • Enhanced system reliability
  • Reduced power loss
  • Improved thermal performance

Disadvantages

  • Sensitivity to static electricity
  • Potential for thermal runaway if not properly managed

Working Principles

The IPB034N06N3GATMA1 operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IPB034N06N3GATMA1 is widely used in: - Switching power supplies - Motor control systems - DC-DC converters - Battery management systems - Solar inverters

Detailed and Complete Alternative Models

Some alternative models to the IPB034N06N3GATMA1 include: - IRF3205 - FDP8878 - AUIRF3710

In conclusion, the IPB034N06N3GATMA1 power MOSFET offers high-performance characteristics suitable for various power management applications, with several alternative models available for specific design requirements.

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قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق IPB034N06N3GATMA1 في الحلول التقنية

Sure, here are 10 common questions and answers related to the application of IPB034N06N3GATMA1 in technical solutions:

  1. What is the maximum drain-source voltage of IPB034N06N3GATMA1?

    • The maximum drain-source voltage is 60V.
  2. What is the continuous drain current rating of IPB034N06N3GATMA1?

    • The continuous drain current rating is 75A.
  3. What is the on-resistance of IPB034N06N3GATMA1?

    • The on-resistance is typically 3.4mΩ at Vgs=10V.
  4. Can IPB034N06N3GATMA1 be used in automotive applications?

    • Yes, it is designed for automotive applications such as motor control and power distribution.
  5. What is the operating temperature range of IPB034N06N3GATMA1?

    • The operating temperature range is -55°C to 175°C.
  6. Does IPB034N06N3GATMA1 have built-in ESD protection?

    • Yes, it has built-in ESD protection.
  7. What type of package does IPB034N06N3GATMA1 come in?

    • It comes in a TO-263-7 package.
  8. Is IPB034N06N3GATMA1 suitable for high-frequency switching applications?

    • Yes, it is suitable for high-frequency switching due to its low on-resistance.
  9. What gate-source voltage is required to fully enhance IPB034N06N3GATMA1?

    • A gate-source voltage of 10V is typically required for full enhancement.
  10. Can IPB034N06N3GATMA1 be used in parallel to increase current handling capability?

    • Yes, it can be used in parallel to increase current handling capability, but proper thermal management is essential.

I hope these questions and answers are helpful for your technical solutions involving IPB034N06N3GATMA1! If you need further assistance, feel free to ask.