IPB041N04NGATMA1

Product Overview

Category

The IPB041N04NGATMA1 belongs to the category of power MOSFETs.

Use

It is used as a high-performance switching device in various electronic applications.

Characteristics

• High voltage capability
• Low gate charge
• Enhanced power dissipation
• Excellent switching performance

Package

The IPB041N04NGATMA1 is available in a TO-263 package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is typically packaged in reels with a quantity of 800 units per reel.

Specifications

• Drain-Source Voltage (VDS): 40V
• Continuous Drain Current (ID): 75A
• Power Dissipation (PD): 160W
• Gate-Source Voltage (VGS): ±20V
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB041N04NGATMA1 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

• Low on-resistance
• Fast switching speed
• High ruggedness
• Avalanche energy specified

Advantages and Disadvantages

Advantages

• High efficiency
• Reduced power loss
• Improved thermal performance
• Enhanced reliability

Disadvantages

• Sensitivity to static electricity
• Higher cost compared to traditional MOSFETs

Working Principles

The IPB041N04NGATMA1 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IPB041N04NGATMA1 is widely used in: - Switching power supplies - Motor control systems - Automotive electronics - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to the IPB041N04NGATMA1 include: - IPB040N04N - IPB042N04N - IPB043N04N

In conclusion, the IPB041N04NGATMA1 power MOSFET offers high-performance characteristics and is suitable for a wide range of electronic applications, especially those requiring efficient power management and control.

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