The IPB180N06S4H1ATMA1 is a power MOSFET belonging to the category of electronic components. This device is commonly used in various applications due to its unique characteristics and performance.
The IPB180N06S4H1ATMA1 follows the standard pin configuration for a TO-263-3 package: 1. Gate (G) 2. Drain (D) 3. Source (S)
The IPB180N06S4H1ATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.
The IPB180N06S4H1ATMA1 finds extensive use in various power electronics applications, including: - Switching power supplies - Motor control - Inverters - DC-DC converters - Automotive systems
Some alternative models to the IPB180N06S4H1ATMA1 include: - IRF1405PBF - FDP8878 - STP80NF55-08
In conclusion, the IPB180N06S4H1ATMA1 is a versatile power MOSFET with high current capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power switching applications.
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What is the maximum drain-source voltage of IPB180N06S4H1ATMA1?
What is the continuous drain current rating of IPB180N06S4H1ATMA1?
What is the on-state resistance (RDS(on)) of IPB180N06S4H1ATMA1?
What is the gate threshold voltage of IPB180N06S4H1ATMA1?
What is the power dissipation of IPB180N06S4H1ATMA1?
What are the recommended operating temperature range for IPB180N06S4H1ATMA1?
Is IPB180N06S4H1ATMA1 suitable for automotive applications?
What type of package does IPB180N06S4H1ATMA1 come in?
Does IPB180N06S4H1ATMA1 have built-in ESD protection?
What are some typical technical solutions where IPB180N06S4H1ATMA1 can be used?