IPB200N15N3GATMA1
Product Overview
Category
The IPB200N15N3GATMA1 belongs to the category of power MOSFETs.
Use
It is used for high-power switching applications in various electronic circuits and systems.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
- Enhanced ruggedness
Package
The IPB200N15N3GATMA1 is typically available in a TO-263-3 package.
Essence
This MOSFET is essential for efficient power management and control in electronic devices and systems.
Packaging/Quantity
It is commonly packaged in reels with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 150V
- Continuous Drain Current (ID): 200A
- RDS(ON) Max @ VGS = 10V: 1.5mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 180nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPB200N15N3GATMA1 typically has three pins: 1. Drain (D) 2. Source (S) 3. Gate (G)
Functional Features
- High voltage capability allows for use in high-power applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid control of power flow.
- Low gate charge facilitates quick and precise gate control.
Advantages and Disadvantages
Advantages
- High voltage capability suitable for demanding applications
- Low on-resistance for improved efficiency
- Fast switching speed for precise power control
Disadvantages
- May require careful handling due to high power capabilities
- Sensitive to overvoltage conditions
Working Principles
The IPB200N15N3GATMA1 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPB200N15N3GATMA1 is commonly used in the following applications: - Motor control systems - Power supplies - Renewable energy systems - Electric vehicles - Industrial automation
Detailed and Complete Alternative Models
Some alternative models to the IPB200N15N3GATMA1 include: - IPB200N15N3G - IPB200N15N3 - IPB200N15N3GAT
In conclusion, the IPB200N15N3GATMA1 is a high-performance power MOSFET with excellent voltage and current handling capabilities, making it suitable for a wide range of high-power applications.
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What is the maximum drain-source voltage of IPB200N15N3GATMA1?
- The maximum drain-source voltage of IPB200N15N3GATMA1 is 150V.
What is the continuous drain current rating of IPB200N15N3GATMA1?
- The continuous drain current rating of IPB200N15N3GATMA1 is 200A.
What is the on-state resistance (RDS(on)) of IPB200N15N3GATMA1?
- The on-state resistance (RDS(on)) of IPB200N15N3GATMA1 is typically 1.5mΩ.
Can IPB200N15N3GATMA1 be used in automotive applications?
- Yes, IPB200N15N3GATMA1 is designed for use in automotive applications.
What is the operating temperature range of IPB200N15N3GATMA1?
- The operating temperature range of IPB200N15N3GATMA1 is -55°C to 175°C.
Does IPB200N15N3GATMA1 have built-in protection features?
- Yes, IPB200N15N3GATMA1 has built-in overcurrent and thermal protection features.
Is IPB200N15N3GATMA1 suitable for high-frequency switching applications?
- Yes, IPB200N15N3GATMA1 is suitable for high-frequency switching applications.
What package type does IPB200N15N3GATMA1 come in?
- IPB200N15N3GATMA1 is available in a TO-263-7 package.
What gate threshold voltage does IPB200N15N3GATMA1 require?
- IPB200N15N3GATMA1 typically requires a gate threshold voltage of 4V.
Can IPB200N15N3GATMA1 be used in parallel to increase current handling capability?
- Yes, IPB200N15N3GATMA1 can be used in parallel to increase current handling capability.