IPB80N03S4L02ATMA1
Product Overview
Category
The IPB80N03S4L02ATMA1 belongs to the category of power MOSFETs.
Use
It is used as a high-performance switching device in various electronic circuits and power applications.
Characteristics
- High current-carrying capability
- Low on-state resistance
- Fast switching speed
- Low gate charge
- Excellent thermal performance
Package
The IPB80N03S4L02ATMA1 is typically available in a TO-263-3 package.
Essence
This MOSFET is essential for efficient power management and control in electronic systems.
Packaging/Quantity
It is commonly packaged in reels with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 30V
- Continuous Drain Current (ID): 80A
- On-State Resistance (RDS(on)): 4mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 60nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPB80N03S4L02ATMA1 follows the standard pin configuration for a power MOSFET: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High current-handling capacity
- Low conduction losses
- Fast switching characteristics
- Suitable for high-frequency applications
- Enhanced thermal performance
Advantages and Disadvantages
Advantages
- Efficient power handling
- Reduced heat dissipation
- Improved system reliability
- Suitable for high-power applications
- Fast response times
Disadvantages
- Higher cost compared to standard MOSFETs
- Sensitive to electrostatic discharge (ESD)
Working Principles
The IPB80N03S4L02ATMA1 operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPB80N03S4L02ATMA1 finds extensive use in the following applications: - Switch-mode power supplies - Motor control systems - Electric vehicles - Solar inverters - Industrial automation - High-power LED lighting
Detailed and Complete Alternative Models
Some alternative models to the IPB80N03S4L02ATMA1 include: - IRF840 - FDP8870 - STP80NF03L
In conclusion, the IPB80N03S4L02ATMA1 is a high-performance power MOSFET with excellent characteristics suitable for a wide range of power applications, offering efficient power management and control capabilities.
Word Count: 411
قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق IPB80N03S4L02ATMA1 في الحلول التقنية
What is the maximum drain-source voltage of IPB80N03S4L02ATMA1?
- The maximum drain-source voltage of IPB80N03S4L02ATMA1 is 30V.
What is the continuous drain current rating of IPB80N03S4L02ATMA1?
- The continuous drain current rating of IPB80N03S4L02ATMA1 is 80A.
What is the on-state resistance (RDS(on)) of IPB80N03S4L02ATMA1?
- The on-state resistance (RDS(on)) of IPB80N03S4L02ATMA1 is typically 4.5mΩ at VGS = 10V.
What is the gate threshold voltage of IPB80N03S4L02ATMA1?
- The gate threshold voltage of IPB80N03S4L02ATMA1 is typically 2V.
What is the power dissipation of IPB80N03S4L02ATMA1?
- The power dissipation of IPB80N03S4L02ATMA1 is 300W.
Is IPB80N03S4L02ATMA1 suitable for high-power applications?
- Yes, IPB80N03S4L02ATMA1 is suitable for high-power applications due to its high current and voltage ratings.
What are the typical applications of IPB80N03S4L02ATMA1?
- Typical applications of IPB80N03S4L02ATMA1 include motor control, power supplies, and DC-DC converters.
Does IPB80N03S4L02ATMA1 have built-in protection features?
- IPB80N03S4L02ATMA1 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
What is the operating temperature range of IPB80N03S4L02ATMA1?
- The operating temperature range of IPB80N03S4L02ATMA1 is -55°C to 175°C.
Is IPB80N03S4L02ATMA1 RoHS compliant?
- Yes, IPB80N03S4L02ATMA1 is RoHS compliant, making it suitable for environmentally friendly designs.