IPB80N04S2L03ATMA1

Product Overview

Use

It is used for high-power switching applications in various electronic devices and systems.

Characteristics

High current-carrying capability
Low on-state resistance
Fast switching speed
Low gate charge
High ruggedness

Package

The IPB80N04S2L03ATMA1 is typically available in a TO-263-3 package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

Drain-Source Voltage (VDS): [specification]
Continuous Drain Current (ID): [specification]
On-State Resistance (RDS(on)): [specification]
Gate-Source Voltage (VGS): [specification]
Total Gate Charge (Qg): [specification]

Detailed Pin Configuration

The IPB80N04S2L03ATMA1 features a standard pin configuration with clearly labeled pins for easy integration into circuit designs.

Functional Features

High current handling capacity
Low power dissipation
Enhanced thermal performance
Compatibility with various driving circuits
Robust and reliable operation under high-stress conditions

Advantages

Efficient power management
Reduced heat dissipation
Improved system reliability
Enhanced circuit performance
Suitable for high-frequency switching applications

Disadvantages

Higher cost compared to standard MOSFETs
Sensitive to electrostatic discharge (ESD)
Requires careful handling during assembly and soldering

Working Principles

The IPB80N04S2L03ATMA1 operates based on the principles of field-effect transistors, utilizing its low on-state resistance and fast switching characteristics to control the flow of high currents in electronic circuits.

Detailed Application Field Plans

The IPB80N04S2L03ATMA1 is widely used in: - Switch-mode power supplies - Motor control systems - Inverters and converters - Automotive electronics - Industrial automation

Detailed and Complete Alternative Models

IPB60R099CP - Similar specifications with lower on-state resistance
IPB50N06S4-08 - Lower current rating but suitable for cost-sensitive applications
IPB30N06S2-30 - Lower voltage rating with comparable performance in low-power applications

In conclusion, the IPB80N04S2L03ATMA1 is a versatile power MOSFET that offers high performance and reliability for various high-power switching applications. Its advanced characteristics and compatibility with diverse circuit designs make it an ideal choice for modern electronic systems.

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