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IPB90N04S402ATMA1

IPB90N04S402ATMA1

Introduction

The IPB90N04S402ATMA1 is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Power MOSFET
  • Use: The IPB90N04S402ATMA1 is commonly used as a switching device in power electronics applications.
  • Characteristics: This MOSFET offers low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
  • Package: The IPB90N04S402ATMA1 is typically available in a TO263-3 package.
  • Essence: It serves as a crucial component in power management circuits, enabling efficient control of power flow.
  • Packaging/Quantity: The IPB90N04S402ATMA1 is usually supplied in reels with varying quantities based on manufacturer specifications.

Specifications

  • Voltage Rating: 40V
  • Current Rating: 90A
  • On-State Resistance: 4mΩ
  • Gate-Source Voltage (Max): ±20V
  • Operating Temperature Range: -55°C to 175°C
  • Package Type: TO263-3

Detailed Pin Configuration

The IPB90N04S402ATMA1 features a standard pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low On-State Resistance: Enables minimal power dissipation during operation.
  • High Switching Speed: Facilitates rapid switching in power electronics applications.
  • Low Gate Charge: Allows for efficient control of the MOSFET.

Advantages and Disadvantages

Advantages

  • High efficiency in power conversion applications
  • Low power dissipation due to low on-state resistance
  • Fast switching speed for improved performance

Disadvantages

  • Sensitivity to voltage spikes and transients
  • Requires careful consideration of gate drive circuitry for optimal performance

Working Principles

The IPB90N04S402ATMA1 operates based on the principles of field-effect transistors, where the control of current flow between the drain and source terminals is achieved through the application of a voltage at the gate terminal. By modulating the gate-source voltage, the MOSFET can effectively control the power flow in the circuit.

Detailed Application Field Plans

The IPB90N04S402ATMA1 finds extensive use in various application fields, including: - Switched-Mode Power Supplies (SMPS): Utilized for efficient power conversion in SMPS designs. - Motor Control: Enables precise control of motor speed and direction in motor drive applications. - Voltage Regulators: Forms an integral part of voltage regulation circuits for stable power supply outputs.

Detailed and Complete Alternative Models

  • IPB80N04S402ATMA1: Similar specifications with slight variations in performance characteristics.
  • IPB100N04S402ATMA1: Higher current rating and lower on-state resistance compared to the IPB90N04S402ATMA1.

In conclusion, the IPB90N04S402ATMA1 power MOSFET stands as a vital component in modern power electronics, offering high efficiency and performance in various applications.

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قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق IPB90N04S402ATMA1 في الحلول التقنية

  1. What is the maximum drain-source voltage of IPB90N04S402ATMA1?

    • The maximum drain-source voltage of IPB90N04S402ATMA1 is 40V.
  2. What is the continuous drain current rating of IPB90N04S402ATMA1?

    • The continuous drain current rating of IPB90N04S402ATMA1 is 90A.
  3. What is the on-state resistance (RDS(on)) of IPB90N04S402ATMA1?

    • The on-state resistance (RDS(on)) of IPB90N04S402ATMA1 is typically 4mΩ at VGS = 10V.
  4. Can IPB90N04S402ATMA1 be used in automotive applications?

    • Yes, IPB90N04S402ATMA1 is suitable for automotive applications.
  5. What is the operating temperature range of IPB90N04S402ATMA1?

    • The operating temperature range of IPB90N04S402ATMA1 is -55°C to 175°C.
  6. Does IPB90N04S402ATMA1 have built-in ESD protection?

    • Yes, IPB90N04S402ATMA1 features built-in ESD protection.
  7. What type of package does IPB90N04S402ATMA1 come in?

    • IPB90N04S402ATMA1 is available in a TO-263-7 package.
  8. Is IPB90N04S402ATMA1 suitable for high-frequency switching applications?

    • Yes, IPB90N04S402ATMA1 is suitable for high-frequency switching applications.
  9. What gate-source voltage is required to fully enhance IPB90N04S402ATMA1?

    • A gate-source voltage of 10V is typically required to fully enhance IPB90N04S402ATMA1.
  10. Can IPB90N04S402ATMA1 be used in power management solutions?

    • Yes, IPB90N04S402ATMA1 is commonly used in power management solutions.