Infineon Technologies
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IPD031N03LGATMA1
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IPD031N03LGATMA1

Product Overview

The IPD031N03LGATMA1 belongs to the category of power MOSFETs and is commonly used in electronic devices for switching and amplification purposes. This MOSFET is known for its high efficiency, low on-resistance, and fast switching speed. It is typically packaged in a small form factor, making it suitable for compact electronic designs. The essence of this product lies in its ability to efficiently control power flow within electronic circuits. The packaging of the IPD031N03LGATMA1 usually consists of a small outline package (SOP) with a specific quantity per reel.

Specifications

  • Voltage Rating: 30V
  • Current Rating: 100A
  • On-Resistance: 3.1mΩ
  • Package Type: SOP-8
  • Quantity per Package: 2500 units/reel

Detailed Pin Configuration

The IPD031N03LGATMA1 features a standard SOP-8 pin configuration: 1. Gate 2. Drain 3. Drain 4. Source 5. Source 6. NC (Not Connected) 7. Source 8. Gate

Functional Features

  • High Efficiency: The MOSFET offers low power dissipation, contributing to overall system efficiency.
  • Fast Switching Speed: Enables rapid switching between on and off states, reducing power loss during transitions.
  • Low On-Resistance: Minimizes voltage drop across the MOSFET, enhancing power transmission efficiency.

Advantages and Disadvantages

Advantages

  • High efficiency
  • Fast switching speed
  • Low on-resistance

Disadvantages

  • Sensitivity to static electricity
  • Limited voltage rating

Working Principles

The IPD031N03LGATMA1 operates based on the principles of field-effect transistors, where the gate voltage controls the conductivity between the drain and source terminals. When a sufficient gate voltage is applied, the MOSFET allows current to flow through, and when the gate voltage is removed, the current flow ceases.

Detailed Application Field Plans

The IPD031N03LGATMA1 finds extensive use in various applications, including: - Power supplies - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models

  • IPD031N03LGBTMA1
  • IPD031N03LGXKSA1
  • IPD031N03LGAKSA1

In conclusion, the IPD031N03LGATMA1 power MOSFET offers high efficiency, fast switching speed, and low on-resistance, making it a versatile component for numerous electronic applications.

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قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق IPD031N03LGATMA1 في الحلول التقنية

  1. What is the maximum drain-source voltage of IPD031N03LGATMA1?

    • The maximum drain-source voltage is 30V.

  2. What is the continuous drain current of IPD031N03LGATMA1?

    • The continuous drain current is 100A.

  3. What is the on-state resistance of IPD031N03LGATMA1?

    • The on-state resistance is typically 3.1mΩ.

  4. What is the gate threshold voltage of IPD031N03LGATMA1?

    • The gate threshold voltage is typically 1V.

  5. What is the power dissipation of IPD031N03LGATMA1?

    • The power dissipation is 2.5W.

  6. What are the recommended operating temperature range for IPD031N03LGATMA1?

    • The recommended operating temperature range is -55°C to 150°C.

  7. What type of package does IPD031N03LGATMA1 come in?

    • It comes in a TO-252-3 package.

  8. Is IPD031N03LGATMA1 suitable for automotive applications?

    • Yes, it is suitable for automotive applications.

  9. Does IPD031N03LGATMA1 have built-in ESD protection?

    • Yes, it has built-in ESD protection.

  10. What are some typical applications for IPD031N03LGATMA1?

    • Some typical applications include motor control, power management, and battery protection in automotive and industrial systems.