IPG20N04S4L11ATMA1
Product Overview
Category
The IPG20N04S4L11ATMA1 belongs to the category of power MOSFETs.
Use
It is used for power management and switching applications in various electronic devices and systems.
Characteristics
- High power handling capability
- Low on-state resistance
- Fast switching speed
- Low gate drive power requirement
Package
The IPG20N04S4L11ATMA1 is typically available in a TO-220 package.
Essence
This MOSFET is essential for efficient power control and management in electronic circuits.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 40V
- Continuous Drain Current (ID): 20A
- RDS(ON) (Max) @ VGS = 10V: 0.004 ohm
- Gate-Source Voltage (VGS) ±20V
- Total Power Dissipation (PD): 88W
Detailed Pin Configuration
The IPG20N04S4L11ATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low on-state resistance for minimal power loss
- Fast switching speed for efficient power control
- High current handling capability for diverse applications
Advantages
- Efficient power management
- Suitable for high-frequency switching applications
- Low power dissipation
Disadvantages
- Sensitivity to overvoltage conditions
- Requires careful static discharge handling during installation
Working Principles
The IPG20N04S4L11ATMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can effectively switch and regulate power flow within a circuit.
Detailed Application Field Plans
The IPG20N04S4L11ATMA1 finds extensive use in various applications, including: - Switching power supplies - Motor control circuits - DC-DC converters - Inverters - Audio amplifiers
Detailed and Complete Alternative Models
Some alternative models to the IPG20N04S4L11ATMA1 include: - IRF3205 - FDP8878 - STP55NF06L
In conclusion, the IPG20N04S4L11ATMA1 power MOSFET offers high-performance characteristics suitable for a wide range of power management and switching applications, making it an essential component in modern electronic systems.
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What is the maximum drain current of IPG20N04S4L11ATMA1?
- The maximum drain current of IPG20N04S4L11ATMA1 is 75A.
What is the gate-source voltage rating of IPG20N04S4L11ATMA1?
- The gate-source voltage rating of IPG20N04S4L11ATMA1 is ±20V.
What is the on-state resistance (RDS(on)) of IPG20N04S4L11ATMA1?
- The on-state resistance (RDS(on)) of IPG20N04S4L11ATMA1 is 4mΩ.
What is the maximum power dissipation of IPG20N04S4L11ATMA1?
- The maximum power dissipation of IPG20N04S4L11ATMA1 is 300W.
What are the typical applications for IPG20N04S4L11ATMA1?
- IPG20N04S4L11ATMA1 is commonly used in applications such as motor control, power supplies, and inverters.
What is the operating temperature range of IPG20N04S4L11ATMA1?
- The operating temperature range of IPG20N04S4L11ATMA1 is -55°C to 175°C.
Does IPG20N04S4L11ATMA1 have built-in protection features?
- Yes, IPG20N04S4L11ATMA1 has built-in overcurrent protection and thermal shutdown features.
What is the gate charge of IPG20N04S4L11ATMA1?
- The gate charge of IPG20N04S4L11ATMA1 is typically 40nC.
Is IPG20N04S4L11ATMA1 suitable for high-frequency switching applications?
- Yes, IPG20N04S4L11ATMA1 is suitable for high-frequency switching due to its low RDS(on) and gate charge characteristics.
Can IPG20N04S4L11ATMA1 be used in automotive applications?
- Yes, IPG20N04S4L11ATMA1 is AEC-Q101 qualified and suitable for automotive applications.