IPS60R2K1CEAKMA1
Product Overview
Category: Power MOSFET
Use: High-power switching applications
Characteristics: High voltage, low on-resistance, fast switching speed
Package: TO-220 Fullpak
Essence: Efficient power management
Packaging/Quantity: Tape and Reel, 800 units
Specifications
- Voltage Rating: 600V
- Current Rating: 60A
- On-Resistance: 0.038 ohm
- Gate Charge: 68nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPS60R2K1CEAKMA1 follows the standard pin configuration for a TO-220 package: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low on-resistance for high efficiency
- Fast switching speed for improved performance
- High voltage rating for versatile applications
Advantages and Disadvantages
Advantages: - High voltage rating allows for diverse application usage - Low on-resistance ensures minimal power loss - Fast switching speed enhances overall performance
Disadvantages: - Relatively high gate charge compared to some alternative models - May require additional heat dissipation in high-power applications
Working Principles
The IPS60R2K1CEAKMA1 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to efficiently control high-power circuits.
Detailed Application Field Plans
The IPS60R2K1CEAKMA1 is ideal for use in various high-power applications such as: - Switched-mode power supplies - Motor control systems - Inverters and converters - Industrial automation equipment
Detailed and Complete Alternative Models
- IPS60R2K1CE - Similar specifications with slight variations in characteristics
- IRF840 - Lower voltage rating but suitable for lower power applications
- IXFN60N60 - Higher current rating and lower on-resistance for specific requirements
In conclusion, the IPS60R2K1CEAKMA1 Power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an excellent choice for various high-power switching applications.
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قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق IPS60R2K1CEAKMA1 في الحلول التقنية
Sure, here are 10 common questions and answers related to the application of IPS60R2K1CEAKMA1 in technical solutions:
Question: What is IPS60R2K1CEAKMA1?
Answer: IPS60R2K1CEAKMA1 is a power MOSFET designed for high efficiency and power density applications.Question: What is the maximum drain-source voltage of IPS60R2K1CEAKMA1?
Answer: The maximum drain-source voltage of IPS60R2K1CEAKMA1 is 600V.Question: What is the typical on-state resistance of IPS60R2K1CEAKMA1?
Answer: The typical on-state resistance of IPS60R2K1CEAKMA1 is 0.060 ohms.Question: What are the typical applications of IPS60R2K1CEAKMA1?
Answer: IPS60R2K1CEAKMA1 is commonly used in switch mode power supplies, motor control, and DC-DC converters.Question: What is the maximum continuous drain current of IPS60R2K1CEAKMA1?
Answer: The maximum continuous drain current of IPS60R2K1CEAKMA1 is 52A.Question: Is IPS60R2K1CEAKMA1 suitable for high frequency switching applications?
Answer: Yes, IPS60R2K1CEAKMA1 is designed for high frequency switching applications.Question: What is the operating temperature range of IPS60R2K1CEAKMA1?
Answer: IPS60R2K1CEAKMA1 can operate within a temperature range of -55°C to 150°C.Question: Does IPS60R2K1CEAKMA1 have built-in protection features?
Answer: IPS60R2K1CEAKMA1 has built-in overcurrent protection and thermal shutdown features.Question: Can IPS60R2K1CEAKMA1 be used in automotive applications?
Answer: Yes, IPS60R2K1CEAKMA1 is suitable for automotive applications due to its high reliability and performance.Question: What are the key advantages of using IPS60R2K1CEAKMA1 in technical solutions?
Answer: The key advantages of IPS60R2K1CEAKMA1 include low on-state resistance, high efficiency, and robustness for demanding applications.