IR2111STRPBF

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Driver for high power applications
• Characteristics: High voltage, high current, and high-speed switching capabilities
• Package: Surface Mount Device (SMD)
• Essence: Power MOSFET and IGBT driver
• Packaging/Quantity: Tape and Reel, 2,500 units per reel

Specifications

• Supply Voltage: 10V to 20V
• Output Current: 2A
• Output Voltage: 10V
• Input Logic Levels: CMOS/TTL compatible
• Operating Temperature Range: -40°C to +125°C
• Package Type: 16-Lead Small Outline Integrated Circuit (SOIC)

Detailed Pin Configuration

1. VCC: Supply voltage input
2. VB: Bootstrap supply voltage input
3. HO: High-side gate drive output
4. LO: Low-side gate drive output
5. VS: High-side floating supply return
6. COM: Common connection for low-side and high-side drivers
7. SD: Shutdown input
8. IN: Logic input
9. RT: Deadtime control resistor
10. CT: Oscillator timing capacitor
11. VS: High-side floating supply return
12. LO: Low-side gate drive output
13. HO: High-side gate drive output
14. VB: Bootstrap supply voltage input
15. VCC: Supply voltage input
16. GND: Ground reference

Functional Features

• Provides high voltage and current capability to drive power MOSFETs and IGBTs
• Offers independent high and low side referenced output channels
• Supports both non-inverting and inverting configurations
• Includes an integrated bootstrap diode for high-side gate drive
• Provides under-voltage lockout protection for both channels
• Offers matched propagation delay for both channels
• Supports 3.3V and 5V logic input levels

Advantages and Disadvantages

Advantages: - High voltage and current capability - Independent high and low side referenced output channels - Integrated bootstrap diode for high-side gate drive - Under-voltage lockout protection - Matched propagation delay

Disadvantages: - Limited operating temperature range (-40°C to +125°C) - Requires external deadtime control resistor and oscillator timing capacitor

Working Principles

The IR2111STRPBF is a high voltage, high-speed power MOSFET and IGBT driver IC. It provides independent high and low side referenced output channels, allowing it to drive power devices efficiently. The integrated bootstrap diode simplifies the high-side gate drive circuitry. The under-voltage lockout protection ensures safe operation by preventing the device from turning on when the supply voltage is below the specified threshold. The matched propagation delay ensures accurate switching of the power devices.

Detailed Application Field Plans

The IR2111STRPBF is commonly used in various high power applications, including: - Motor drives - Switching power supplies - Inverters - UPS (Uninterruptible Power Supply) systems - Industrial automation equipment - Solar inverters - Electric vehicle charging systems

Detailed and Complete Alternative Models

• IR2110: Similar functionality with slightly different specifications
• IR2104: Half-bridge driver with similar features
• IRS21844: High voltage half-bridge driver with additional protection features
• MCP1407: Low-cost MOSFET driver with limited voltage and current capabilities

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