IR2125SPBF

Product Overview

Category: Integrated Circuit (IC)

Use: The IR2125SPBF is a high voltage, high-speed power MOSFET and IGBT driver. It is specifically designed for applications requiring efficient driving of MOSFETs and IGBTs in half-bridge and full-bridge configurations.

Characteristics: - High voltage capability - Fast switching speed - Low power consumption - Compact package size - Robust protection features

Package: The IR2125SPBF is available in a compact surface mount package, which ensures easy integration into various electronic circuits.

Essence: The essence of the IR2125SPBF lies in its ability to provide reliable and efficient driving of power MOSFETs and IGBTs, enabling high-performance operation of various power electronics systems.

Packaging/Quantity: The IR2125SPBF is typically packaged in reels or tubes, with quantities varying based on customer requirements.

Specifications

• Supply Voltage: 10V - 20V
• Output Current: 200mA
• Operating Temperature Range: -40°C to 125°C
• Maximum PWM Frequency: 500kHz
• Propagation Delay: 120ns
• Dead Time Control Range: 0ns - 400ns

Pin Configuration

The IR2125SPBF features a 16-pin dual-in-line package (DIP) with the following pin configuration:

1. VCC
2. VB
3. HO
4. LO
5. VS
6. COM
7. SD
8. RT
9. CT
10. DT
11. RC
12. OSC
13. NC
14. NC
15. NC
16. GND

Functional Features

• High voltage level shifting
• Undervoltage lockout protection
• Shoot-through protection
• Adjustable dead time control
• Integrated bootstrap diode
• Fault status indication

Advantages and Disadvantages

Advantages: - High voltage capability allows for driving of power MOSFETs and IGBTs in various applications - Fast switching speed enables efficient operation of power electronics systems - Low power consumption contributes to energy efficiency - Compact package size facilitates easy integration into electronic circuits - Robust protection features enhance system reliability

Disadvantages: - Limited output current may restrict usage in high-power applications - Maximum PWM frequency may not be suitable for certain high-frequency applications

Working Principles

The IR2125SPBF operates by receiving input signals from a microcontroller or other control circuitry. It utilizes level shifting techniques to provide the necessary gate drive voltage for power MOSFETs and IGBTs. The integrated bootstrap diode simplifies the design by eliminating the need for an external diode.

The device incorporates undervoltage lockout protection, which ensures that the driver is only active when the supply voltage is within the specified range. Shoot-through protection prevents both high-side and low-side MOSFETs/IGBTs from conducting simultaneously, avoiding damaging short circuits.

The adjustable dead time control feature allows for precise timing between the turn-off of one switch and the turn-on of the complementary switch, preventing shoot-through currents. Fault status indication signals any abnormal conditions, enabling timely troubleshooting.

Detailed Application Field Plans

The IR2125SPBF finds extensive application in various fields, including:

1. Motor control systems
2. Switch-mode power supplies
3. Uninterruptible power supplies (UPS)
4. Solar inverters
5. Electric vehicle charging systems
6. Industrial automation equipment
7. Lighting systems
8. Audio amplifiers

Detailed and Complete Alternative Models

1. IR2104SPBF: Similar to the IR2125SPBF, but with a lower output current capability.
2. IR2184SPBF: Higher voltage and current capability compared to the IR2125SPBF, suitable for high-power applications.
3. IRS2106SPBF: Designed specifically for half-bridge configurations, offering enhanced performance in such applications.

These alternative models provide options based on specific requirements and can be considered as alternatives to the IR2125SPBF.

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