IR2301STR

Product Overview

Category: Integrated Circuit (IC)

Use: The IR2301STR is a high voltage, high-speed power MOSFET and IGBT driver. It is specifically designed to drive high-power applications such as motor drives, inverters, and power supplies.

Characteristics: - High voltage capability - Fast switching speed - Low power consumption - Compact package size - Robust design for reliable operation

Package: The IR2301STR is available in a small outline integrated circuit (SOIC) package. This package provides excellent thermal performance and ease of handling during assembly.

Essence: The essence of the IR2301STR lies in its ability to efficiently control and drive high-power MOSFETs and IGBTs, enabling the conversion of electrical energy with minimal losses.

Packaging/Quantity: The IR2301STR is typically sold in reels or tubes containing a specified quantity of ICs, depending on the manufacturer's packaging standards.

Specifications

• Supply Voltage: 10V - 20V
• Output Current: 200mA
• Operating Temperature Range: -40°C to 125°C
• Maximum PWM Frequency: 500kHz
• Propagation Delay: 120ns
• Rise/Fall Time: 55ns

Pin Configuration

The IR2301STR features a 14-pin configuration, as follows:

1. VCC - Power supply voltage
2. VB - Bootstrap supply voltage
3. HO - High-side gate driver output
4. LO - Low-side gate driver output
5. VS - High-side floating supply return
6. COM - Common connection for low-side and high-side drivers
7. SD - Shutdown input
8. RT - Deadtime control resistor
9. CT - Oscillator timing capacitor
10. VSS - Ground
11. HO - High-side gate driver output
12. LO - Low-side gate driver output
13. VS - High-side floating supply return
14. VB - Bootstrap supply voltage

Functional Features

• High voltage level shifting capability
• Under-voltage lockout protection
• Over-current shutdown protection
• Shoot-through prevention logic
• Adjustable deadtime control
• Integrated bootstrap diode for high-side driver

Advantages and Disadvantages

Advantages: - Enables efficient and reliable driving of high-power MOSFETs and IGBTs - Fast switching speed allows for high-frequency operation - Compact package size saves board space - Robust design ensures long-term reliability - Integrated features simplify circuit design

Disadvantages: - Limited output current may not be suitable for extremely high-power applications - Requires external components for proper operation - Higher cost compared to basic driver circuits

Working Principles

The IR2301STR operates by receiving input signals from a microcontroller or control circuitry and generating the necessary drive signals to control the high-power MOSFETs or IGBTs. It utilizes a bootstrap technique to provide the required high-side gate drive voltage, while also incorporating various protection features to ensure safe and reliable operation.

Detailed Application Field Plans

The IR2301STR is widely used in various applications, including: - Motor drives for electric vehicles and industrial machinery - Inverters for solar power systems and uninterruptible power supplies (UPS) - Power supplies for telecommunications equipment and server systems - Industrial automation and robotics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the IR2301STR include: - IR2110 - IRS21844 - TC4427 - HIP4081A

These alternatives can be considered based on specific application requirements, availability, and cost considerations.

In conclusion, the IR2301STR is a high-performance IC designed for driving high-power MOSFETs and IGBTs. Its compact size, fast switching speed, and robust design make it suitable for a wide range of applications in various industries.