PTFA211801EV5XWSA1

Product Category: RF Power Transistor

Basic Information Overview: - Category: Electronic Component - Use: Amplification of radio frequency signals - Characteristics: High power, high frequency operation, low distortion - Package: SMD (Surface Mount Device) - Essence: Power amplification for RF applications - Packaging/Quantity: Typically packaged in reels of 1000 units

Specifications: - Operating Frequency: 1.8 GHz - Power Output: 5 Watts - Voltage: 28V - Current: 500mA - Gain: 13dB - Package Type: SOT-89

Detailed Pin Configuration: - Pin 1: RF Input - Pin 2: Ground - Pin 3: RF Output - Pin 4: Bias

Functional Features: - High power gain - Low intermodulation distortion - Wide operating frequency range - Good thermal stability

Advantages and Disadvantages: - Advantages: - High power output - Low distortion - Wide frequency range - Disadvantages: - Requires careful biasing for optimal performance

Working Principles: The PTFA211801EV5XWSA1 operates on the principle of amplifying radio frequency signals using a combination of active and passive components to achieve high power gain with minimal distortion.

Detailed Application Field Plans: This transistor is suitable for use in various RF amplification applications including: - Cellular base stations - Microwave links - Radar systems - Satellite communications

Detailed and Complete Alternative Models: - PTFA210301EV5 - PTFA210401EV5 - PTFA210501EV5 - PTFA210601EV5

This completes the entry for PTFA211801EV5XWSA1 in the English editing encyclopedia format.