Infineon Technologies
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SMBT2907AE6327HTSA1
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SMBT2907AE6327HTSA1

Product Overview

  • Category: Transistor
  • Use: Amplification and switching in electronic circuits
  • Characteristics: High voltage, low power dissipation, small package size
  • Package: SOT-23
  • Essence: NPN transistor
  • Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Current - Collector (Ic) (Max): 600mA
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
  • Transition Frequency: 250MHz

Detailed Pin Configuration

The SMBT2907AE6327HTSA1 transistor has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

  • High voltage capability
  • Low leakage current
  • Fast switching speed
  • Small package size for space-constrained applications

Advantages and Disadvantages

Advantages

  • High voltage rating
  • Low power dissipation
  • Small package size
  • Wide range of applications

Disadvantages

  • Limited maximum current handling capability
  • Moderate transition frequency

Working Principles

The SMBT2907AE6327HTSA1 operates as a bipolar junction transistor (BJT). When a small current flows into the base terminal, it controls a much larger current between the collector and emitter terminals, allowing for amplification and switching functions in electronic circuits.

Detailed Application Field Plans

The SMBT2907AE6327HTSA1 is suitable for various applications including: - Audio amplifiers - Signal amplification - Switching circuits - Voltage regulators - Oscillators

Detailed and Complete Alternative Models

Some alternative models to SMBT2907AE6327HTSA1 include: - BC337 - 2N3904 - 2N2222 - 2N4401

This comprehensive entry provides an in-depth understanding of the SMBT2907AE6327HTSA1 transistor, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

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قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق SMBT2907AE6327HTSA1 في الحلول التقنية

  1. What is SMBT2907AE6327HTSA1?

    • SMBT2907AE6327HTSA1 is a PNP transistor designed for general purpose amplifier and switching applications.

  2. What are the key features of SMBT2907AE6327HTSA1?

    • The key features include a high current gain, low collector-emitter saturation voltage, and low equivalent on-resistance.

  3. What are the typical applications of SMBT2907AE6327HTSA1?

    • Typical applications include audio amplification, signal processing, and low-power switching circuits.

  4. What is the maximum collector current rating of SMBT2907AE6327HTSA1?

    • The maximum collector current rating is 600mA.

  5. What is the maximum power dissipation of SMBT2907AE6327HTSA1?

    • The maximum power dissipation is 330mW.

  6. What is the voltage rating for SMBT2907AE6327HTSA1?

    • The voltage rating is 60V.

  7. What are the recommended operating conditions for SMBT2907AE6327HTSA1?

    • The recommended operating conditions include a collector current of 100mA, a collector-emitter voltage of 45V, and a base current of 10mA.

  8. Is SMBT2907AE6327HTSA1 suitable for low-power applications?

    • Yes, SMBT2907AE6327HTSA1 is suitable for low-power applications due to its low collector-emitter saturation voltage.

  9. Can SMBT2907AE6327HTSA1 be used in audio amplifier circuits?

    • Yes, SMBT2907AE6327HTSA1 is commonly used in audio amplifier circuits due to its high current gain and low noise characteristics.

  10. Where can I find detailed technical specifications for SMBT2907AE6327HTSA1?

    • Detailed technical specifications can be found in the datasheet provided by the manufacturer or distributor of the component.