SMBTA92E6327HTSA1

Product Category: Transistor

Basic Information Overview:

• Category: Bipolar (BJT) Transistor
• Use: Amplification and switching of electronic signals
• Characteristics: Small signal, high current gain, low power dissipation
• Package: SOT-23
• Essence: NPN silicon epitaxial planar transistor
• Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications:

• Collector-Base Voltage (VCBO): 300V
• Collector-Emitter Voltage (VCEO): 300V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 500mA
• Power Dissipation (PD): 330mW
• Transition Frequency (fT): 300MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration:

The SMBTA92E6327HTSA1 transistor has three pins: Collector (C), Base (B), and Emitter (E). The pin configuration is as follows: - C (Pin 1) - B (Pin 2) - E (Pin 3)

Functional Features:

• High current gain
• Low noise
• Fast switching speed
• Miniature SOT-23 package

Advantages:

• Small size
• High current gain
• Wide operating temperature range
• Suitable for high-speed switching applications

Disadvantages:

• Limited power dissipation capability
• Relatively low collector current rating

Working Principles:

The SMBTA92E6327HTSA1 operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its terminals to amplify or switch electronic signals.

Detailed Application Field Plans:

• Audio amplification circuits
• Switching circuits in electronic devices
• Signal processing applications

Detailed and Complete Alternative Models:

• BC547B
• 2N3904
• 2SC945

This comprehensive entry provides an in-depth understanding of the SMBTA92E6327HTSA1 transistor, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.