HIP2100EIBT

Product Overview

• Category: Integrated Circuit
• Use: Power Management
• Characteristics: High-performance, low-side gate driver
• Package: 8-Lead SOIC
• Essence: Efficiently drives N-channel MOSFETs and IGBTs in various applications
• Packaging/Quantity: Tape and Reel, 2500 units per reel

Specifications

• Supply Voltage: 4.5V to 18V
• Output Current: 2A peak
• Propagation Delay: 55ns (typical)
• Rise/Fall Time: 15ns (typical)
• Operating Temperature Range: -40°C to +125°C

Detailed Pin Configuration

1. VDD: Supply voltage input
2. GND: Ground reference
3. IN: Input control signal
4. LO: Low-side output
5. COM: Common connection for LO and HO
6. HO: High-side output
7. VB: Bootstrap supply voltage
8. VS: High-side floating supply return

Functional Features

• High-speed switching capability
• Wide operating voltage range
• Integrated bootstrap diode
• Under-voltage lockout protection
• Over-temperature shutdown
• Short-circuit protection

Advantages

• Efficiently drives power MOSFETs and IGBTs
• Fast switching speed reduces power losses
• Wide operating voltage range allows flexibility in different applications
• Integrated bootstrap diode simplifies circuit design
• Comprehensive protection features enhance system reliability

Disadvantages

• Limited to driving N-channel MOSFETs and IGBTs only
• Requires external components for proper operation
• Not suitable for high-frequency applications

Working Principles

The HIP2100EIBT is a high-performance, low-side gate driver designed to drive N-channel MOSFETs and IGBTs in various power management applications. It operates by receiving an input control signal (IN) and generating corresponding high and low-side output signals (HO and LO). These output signals are used to control the switching of the power devices.

The device incorporates an integrated bootstrap diode, which simplifies the circuit design by eliminating the need for an external diode. It also features under-voltage lockout protection, over-temperature shutdown, and short-circuit protection to ensure safe and reliable operation.

Detailed Application Field Plans

The HIP2100EIBT is widely used in applications such as motor drives, power supplies, inverters, and industrial automation. Its fast switching speed and wide operating voltage range make it suitable for various power management systems. Some specific application areas include:

1. Electric vehicle motor control
2. Solar power inverters
3. Uninterruptible power supplies (UPS)
4. Industrial motor drives
5. Switching power supplies

Alternative Models

1. HIP2101EIBT: Similar specifications, but with additional fault reporting features.
2. HIP2102EIBT: Higher output current capability, suitable for driving larger power devices.
3. HIP2103EIBT: Enhanced protection features, including over-current detection and fault reporting.

These alternative models provide similar functionality to the HIP2100EIBT, catering to different application requirements.

In conclusion, the HIP2100EIBT is a high-performance, low-side gate driver that efficiently drives N-channel MOSFETs and IGBTs in various power management applications. With its fast switching speed, wide operating voltage range, and comprehensive protection features, it offers significant advantages in terms of performance and reliability. However, it is important to consider its limitations, such as the requirement for external components and its suitability for specific application fields.