IS42S16100H-6TLI-TR

Product Overview

Category

IS42S16100H-6TLI-TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Low power consumption
• Compact package size
• Wide operating temperature range
• Reliable performance

Package

IS42S16100H-6TLI-TR is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of IS42S16100H-6TLI-TR lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

IS42S16100H-6TLI-TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Size: 16 Megabits (1 Megabyte)
• Organization: 1M x 16 bits
• Supply Voltage: 2.5V - 3.3V
• Access Time: 6 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Pin Count: 48

Detailed Pin Configuration

The pin configuration of IS42S16100H-6TLI-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /WE
35. /CAS
36. /RAS
37. /CS
38. /OE
39. /LDQM
40. /UDQM
41. NC
42. VSS
43. VSS
44. VSS
45. VDDQ
46. VDDQ
47. VDDQ
48. VDD

Functional Features

• High-speed data access and transfer
• Burst mode operation for efficient data retrieval
• Auto-refresh capability to maintain data integrity
• Low power self-refresh mode for reduced power consumption
• On-chip address and control circuitry for simplified interfacing

Advantages and Disadvantages

Advantages

• Fast data access and transfer speeds
• Low power consumption
• Compact package size
• Wide operating temperature range
• Reliable performance

Disadvantages

• Limited storage capacity compared to other memory technologies
• Higher cost per unit compared to some alternative memory options

Working Principles

IS42S16100H-6TLI-TR operates based on the principles of dynamic random access memory (DRAM). It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. To read or write data, the appropriate row and column addresses are selected, and the charge stored in the corresponding capacitor is sensed or modified.

Detailed Application Field Plans

IS42S16100H-6TLI-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to IS42S16100H-6TLI-TR include: - MT48LC16M16A2P-75IT: 16 Megabit SDRAM, 1M x 16 bits, 3.3V, 7.5 ns access time. - K4S561632J-UC75: 16 Megabit SDRAM, 1M x 16 bits, 3.3V, 7.5 ns access time. - AS4C16M16SA-6TCN: 16 Megabit SDRAM, 1M x 16 bits, 3.3V, 6 ns access time.

These alternative models offer similar specifications and functionality to