IS42S16400F-6BLI-TR

Product Overview

Category

IS42S16400F-6BLI-TR belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in electronic devices such as computers, laptops, and mobile phones for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Low power consumption
• Compact size
• Compatibility with various electronic devices

Package

IS42S16400F-6BLI-TR is typically packaged in a small form factor, such as a surface mount technology (SMT) package.

Essence

The essence of IS42S16400F-6BLI-TR lies in its ability to provide fast and efficient data storage and retrieval functions in electronic devices.

Packaging/Quantity

IS42S16400F-6BLI-TR is commonly available in reels or trays, with varying quantities depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 16 Megabits (2 Megabytes)
• Organization: 1M x 16 bits
• Speed: 6 nanoseconds (max)
• Voltage Supply: 3.3V
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S16400F-6BLI-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS
38. /CKE
39. /LDQM
40. /UDQM

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency settings

Advantages and Disadvantages

Advantages

• Fast data transfer rate enhances overall system performance
• Low power consumption prolongs battery life in portable devices
• Compact size allows for integration into space-constrained designs
• Compatibility with various electronic devices ensures versatility

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited storage capacity compared to other memory types
• Susceptible to data loss in case of power failure without proper backup mechanisms

Working Principles

IS42S16400F-6BLI-TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores data in a matrix of capacitors, which are organized into rows and columns. The data is accessed by sending row and column addresses along with control signals to select the desired memory location. The stored data is read or written using the parallel interface.

Detailed Application Field Plans

IS42S16400F-6BLI-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Mobile phones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models to IS42S16400F-6BLI-TR include: - MT48LC16M16A2P-75:G - AS4C16M16SA-7TCN - K4S161622D-TC60

These alternative models offer similar specifications and functionality, providing options for designers and manufacturers based on their specific requirements.

In conclusion, IS42S16400F-6BLI-TR is a high-speed synchronous DRAM module used in various electronic devices for efficient data storage and retrieval. Its compact size, low power consumption, and compatibility make it a popular choice among designers. However, it has limitations in terms of storage capacity and cost compared to other memory technologies.