IS42S32400B-7BL-TR

Product Overview

Category

IS42S32400B-7BL-TR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

It is primarily used as a memory component in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS42S32400B-7BL-TR is available in a small outline, thin profile (TSOP) package.

Essence

The essence of IS42S32400B-7BL-TR lies in its ability to store and retrieve data quickly and efficiently, making it an essential component for various electronic devices.

Packaging/Quantity

IS42S32400B-7BL-TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of memory modules.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 256 Megabits (32 Megabytes)
• Organization: 4 banks x 4,194,304 words x 16 bits
• Operating Voltage: 3.3V
• Clock Frequency: 143 MHz
• Access Time: 7 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S32400B-7BL-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. A16
37. A17
38. A18
39. A19
40. A20
41. A21
42. A22
43. A23
44. A24
45. A25
46. A26
47. A27
48. A28
49. A29
50. A30
51. A31
52. /CAS
53. /RAS
54. /WE
55. /CS0
56. /CS1
57. /CS2
58. /CS3
59. /CKE
60. /CLK

Functional Features

• Burst mode operation for efficient data transfer
• Auto-refresh and self-refresh modes for power-saving
• Programmable burst length and latency settings
• On-die termination (ODT) for improved signal integrity
• Multiplexed address and data bus for reduced pin count

Advantages and Disadvantages

Advantages

• High-speed data access enables faster processing
• Large storage capacity accommodates extensive data requirements
• Low power consumption prolongs battery life in portable devices
• Compact package size allows for space-efficient designs
• Reliable performance ensures data integrity

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability in terms of capacity expansion

Working Principles

IS42S32400B-7BL-TR operates based on the principles of synchronous dynamic random-access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The memory cells are organized into banks, and data is accessed by providing the appropriate row and column addresses. The synchronous nature of the memory ensures that data is transferred in synchronization with an external clock signal.

Detailed Application Field Plans

IS42S32400B-7BL-TR finds applications in various fields, including: 1. Personal computers 2. Laptops and notebooks 3. Servers and data centers 4. Mobile devices (smartphones, tablets) 5. Automotive electronics 6. Industrial automation systems 7. Medical equipment 8. Consumer electronics

Detailed and Complete Alternative Models

Some alternative models to IS42S32400B-7BL-TR include: 1. MT48LC32M16A2P-75: 512 Megabit SDRAM, 4 banks x 4,194