IS43DR16160B-3DBL-TR

Product Overview

Category

IS43DR16160B-3DBL-TR belongs to the category of dynamic random-access memory (DRAM) products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Non-volatile memory
• Reliable performance

Package

IS43DR16160B-3DBL-TR is available in a compact package that ensures easy integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve data quickly and efficiently, enhancing the overall performance of electronic devices.

Packaging/Quantity

IS43DR16160B-3DBL-TR is typically packaged in trays or reels, with varying quantities depending on customer requirements.

Specifications

• Memory Type: Dynamic Random-Access Memory (DRAM)
• Capacity: 16 gigabits (2 gigabytes)
• Speed: 3.2 gigabits per second
• Voltage: 1.2 volts
• Interface: Double Data Rate 4 (DDR4)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS43DR16160B-3DBL-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. VDD
20. BA0
21. BA1
22. A0
23. A1
24. A2
25. A3
26. A4
27. A5
28. A6
29. A7
30. A8
31. A9
32. A10
33. A11
34. A12
35. A13
36. A14
37. A15
38. A16
39. A17
40. A18
41. A19
42. A20
43. A21
44. A22
45. A23
46. A24
47. A25
48. A26
49. A27
50. A28
51. A29
52. A30
53. A31
54. VSS
55. VDD
56. CK
57. CK#
58. CKE
59. CS#
60. RAS#
61. CAS#
62. WE#
63. DM0
64. DM1
65. VSS
66. VDD

Functional Features

• High-speed data access and transfer
• Low power consumption
• Error correction capabilities
• Self-refresh mode for power-saving
• Compatibility with DDR4 interface standards

Advantages and Disadvantages

Advantages

• Fast data access and transfer speeds
• Large storage capacity
• Low power consumption
• Reliable performance
• Error correction capabilities

Disadvantages

• Relatively higher cost compared to other memory technologies
• Sensitive to electrical noise and interference

Working Principles

IS43DR16160B-3DBL-TR operates based on the principles of dynamic random-access memory. It stores data in capacitors within memory cells, which are periodically refreshed to maintain the stored information. When data needs to be accessed or written, the appropriate memory cells are activated and the data is transferred through the interface.

Detailed Application Field Plans

IS43DR16160B-3DBL-TR finds extensive application in various electronic devices, including: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to IS43DR16160B-3DBL-TR include: - IS43DR16128B-3DBL-TR - IS43DR32240D-3DBL-TR - IS43DR64320E-3DBL-TR - IS43DR12800F-3DBL-TR

These alternative models offer similar functionality and characteristics, providing flexibility for different design requirements.

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