IS61LPD102418A-200B3I

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed performance
  • Low power consumption
  • Large storage capacity
• Package: BGA (Ball Grid Array)
• Essence: Non-volatile memory
• Packaging/Quantity: Individually packaged, quantity varies based on customer requirements

Specifications

• Model: IS61LPD102418A-200B3I
• Technology: CMOS (Complementary Metal-Oxide-Semiconductor)
• Memory Type: SRAM (Static Random Access Memory)
• Organization: 1M x 24 bits
• Operating Voltage: 2.5V - 3.3V
• Speed: 200 MHz
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• RoHS Compliance: Yes

Detailed Pin Configuration

The IS61LPD102418A-200B3I has a total of 100 pins. The pin configuration is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VDD | Power supply voltage | | 2 | VDDQ | Power supply voltage for I/O buffers | | 3 | GND | Ground | | 4-27 | A0-A23 | Address inputs | | 28 | CE | Chip Enable | | 29 | WE | Write Enable | | 30 | OE | Output Enable | | 31-54 | DQ0-DQ23 | Data input/output | | 55 | DM | Data Mask | | 56 | DQS | Data Strobe | | 57 | DQSB | Complementary Data Strobe | | 58-61 | VREF | Reference voltage for input buffers | | 62 | CLK | Clock input | | 63 | CKE | Clock Enable | | 64 | CS | Chip Select | | 65-100 | NC | No Connection |

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low power consumption ensures efficient energy usage.
• Large storage capacity provides ample space for data storage.
• Non-volatile memory retains stored data even when power is removed.

Advantages

• Fast data access and retrieval due to high-speed performance.
• Low power consumption prolongs battery life in portable devices.
• Large storage capacity accommodates extensive data requirements.
• Non-volatile memory ensures data retention without the need for constant power supply.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Limited scalability in terms of storage capacity compared to some newer memory technologies.

Working Principles

The IS61LPD102418A-200B3I is a static random access memory (SRAM) device. It stores data using flip-flop circuits, which retain information as long as power is supplied. The memory cells are organized in a 1M x 24-bit configuration, allowing for simultaneous read and write operations. The device operates at a speed of 200 MHz, enabling fast data access and transfer.

Detailed Application Field Plans

The IS61LPD102418A-200B3I is commonly used in various applications that require high-speed and low-power memory solutions. Some potential application fields include: - Networking equipment - Telecommunications systems - Industrial automation - Medical devices - Automotive electronics

Detailed and Complete Alternative Models

• IS61LPD102418B-200B3I: Similar to IS61LPD102418A-200B3I, but with extended temperature range (-55°C to +125°C).
• IS61LPD102418C-200B3I: Similar to IS61LPD102418A-200B3I, but with higher speed (250 MHz).

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