IS61LPS102418A-200B3-TR

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory module
• Characteristics: Low power consumption, high-speed operation
• Package: BGA (Ball Grid Array)
• Essence: Dynamic Random Access Memory (DRAM)
• Packaging/Quantity: Tape and reel, 250 units per reel

Specifications

• Part Number: IS61LPS102418A-200B3-TR
• Organization: 1M x 4 x 18
• Voltage: 2.5V
• Speed: 200 MHz
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 100 years
• Refresh: Auto-refresh and self-refresh modes

Detailed Pin Configuration

The IS61LPS102418A-200B3-TR has a total of 165 pins. The pin configuration is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VDD | Power supply voltage | | 2 | VSS | Ground | | 3-20 | A0-A17 | Address inputs | | 21 | BA0 | Bank address input | | 22 | BA1 | Bank address input | | 23 | BA2 | Bank address input | | 24 | RAS | Row address strobe | | 25 | CAS | Column address strobe | | 26 | WE | Write enable | | 27 | CKE | Clock enable | | 28 | CS | Chip select | | 29-46 | DQ0-DQ17 | Data inputs/outputs | | 47 | DM0 | Data mask | | 48 | DM1 | Data mask | | ... | ... | ... | | 165 | VREF | Reference voltage |

Functional Features

• High-speed operation: The IS61LPS102418A-200B3-TR operates at a speed of 200 MHz, allowing for fast data access and transfer.
• Low power consumption: This memory module is designed to consume minimal power, making it suitable for battery-powered devices.
• Auto-refresh and self-refresh modes: The IC supports both auto-refresh and self-refresh modes, ensuring data integrity and reliability.

Advantages and Disadvantages

Advantages: - High-speed operation enables quick data access. - Low power consumption prolongs battery life in portable devices. - Auto-refresh and self-refresh modes ensure data integrity.

Disadvantages: - Limited storage capacity compared to other memory modules. - Sensitive to electrical noise and interference.

Working Principles

The IS61LPS102418A-200B3-TR is based on dynamic random access memory (DRAM) technology. It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain the stored information. The IC uses row and column address strobes (RAS and CAS) to access specific memory locations and read or write data. The clock enable (CKE) signal controls the timing of operations, while the chip select (CS) signal enables or disables the IC.

Detailed Application Field Plans

The IS61LPS102418A-200B3-TR is commonly used in various applications, including: 1. Mobile devices: Smartphones, tablets, and portable media players benefit from the low power consumption and high-speed operation of this memory module. 2. Embedded systems: The IC finds application in embedded systems such as industrial control systems, automotive electronics, and IoT devices. 3. Networking equipment: Routers, switches, and network appliances utilize this memory module for data buffering and caching.

Detailed and Complete Alternative Models

1. IS61LPS102418B-200B3-TR: Similar to the IS61LPS102418A-200B3-TR, but with a different part number.
2. IS61LPS102418A-200B4-TR: A variant with improved performance characteristics.
3. IS61LPS204818A-200B3-TR: Offers double the storage capacity compared to the IS61LPS102418A-200B3-TR.

(Note: The above alternative models are provided for illustrative purposes and may not represent an exhaustive list.)

In conclusion, the IS61LPS102418A-200B3-TR is a low-power, high-speed memory module designed for various applications. Its compact BGA package, along with its functional features and advantages, make it a suitable choice for devices requiring efficient data storage and retrieval.

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