IS61VPS204836B-250B3L-TR

Product Overview

Category

IS61VPS204836B-250B3L-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and other digital systems.

Characteristics

• High-speed performance
• Non-volatile memory
• Low power consumption
• Compact size
• Durable and reliable

Package

IS61VPS204836B-250B3L-TR is available in a compact package that ensures easy integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve data quickly and efficiently, enhancing the overall performance of electronic devices.

Packaging/Quantity

IS61VPS204836B-250B3L-TR is typically packaged in reels or trays, with each package containing a specific quantity of units. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 4 Megabits (4Mbit)
• Organization: 512K words x 8 bits
• Supply Voltage: 2.5V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 10 ns
• Interface: Parallel

Detailed Pin Configuration

The pin configuration of IS61VPS204836B-250B3L-TR is as follows:

1. Vcc
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. /CE1
27. /CE2
28. /OE
29. /WE
30. I/O0
31. I/O1
32. I/O2
33. I/O3
34. I/O4
35. I/O5
36. I/O6
37. I/O7
38. GND

Functional Features

• High-speed data access and retrieval
• Non-volatile memory retains data even when power is disconnected
• Low power consumption for efficient operation
• Reliable performance in various operating conditions
• Easy integration into electronic devices

Advantages and Disadvantages

Advantages

• Fast data access and retrieval, enhancing overall device performance
• Non-volatile memory ensures data retention even during power loss
• Low power consumption prolongs battery life in portable devices
• Compact size allows for easy integration into small form factor devices
• Reliable performance in different environmental conditions

Disadvantages

• Limited storage capacity compared to other memory technologies
• Higher cost per unit compared to some alternative memory options
• Requires additional circuitry for interfacing with the host device

Working Principles

IS61VPS204836B-250B3L-TR utilizes static random access memory (SRAM) technology. It stores data in a volatile manner, meaning that the data is lost when power is disconnected. However, it offers high-speed access times and does not require periodic refreshing like dynamic RAM (DRAM). The memory cells in SRAM are made up of flip-flops, which retain their state until changed.

Detailed Application Field Plans

IS61VPS204836B-250B3L-TR finds applications in various electronic devices, including but not limited to: - Computers and laptops - Smartphones and tablets - Networking equipment - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to IS61VPS204836B-250B3L-TR include: - IS61VPS204816B-250B3L-TR - IS61VPS204832B-250B3L-TR - IS61VPS204864B-250B3L-TR - IS61VPS2048128B-250B3L-TR

These alternative models offer similar functionality and characteristics, with variations in capacity and organization.

Word count: 550 words