IS61WV51216EDBLL-8TLI-TR

Product Overview

Category

IS61WV51216EDBLL-8TLI-TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and other digital systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Compact package size
• Reliable performance

Package

IS61WV51216EDBLL-8TLI-TR is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to store and retrieve data quickly and efficiently, making it an essential component in modern electronic devices.

Packaging/Quantity

IS61WV51216EDBLL-8TLI-TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 512K words x 16 bits
• Supply Voltage: 3.3V
• Access Time: 8 ns
• Operating Temperature Range: -40°C to +85°C
• Pin Count: 48

Detailed Pin Configuration

The pin configuration of IS61WV51216EDBLL-8TLI-TR is as follows:

1. Vcc
2. WE#
3. A0
4. A1
5. A2
6. A3
7. A4
8. A5
9. A6
10. A7
11. A8
12. A9
13. A10
14. A11
15. A12
16. A13
17. A14
18. A15
19. DQ0
20. DQ1
21. DQ2
22. DQ3
23. DQ4
24. DQ5
25. DQ6
26. DQ7
27. DQ8
28. DQ9
29. DQ10
30. DQ11
31. DQ12
32. DQ13
33. DQ14
34. DQ15
35. GND
36. OE#
37. CE#
38. UB#
39. LB#
40. CLK
41. ADSP#
42. ADSC#
43. ADSP#
44. ADSC#
45. ADSP#
46. ADSC#
47. ADSP#
48. ADSC#

Functional Features

• High-speed data access and retrieval
• Low power consumption during standby mode
• Easy integration into various electronic systems
• Reliable performance in harsh operating conditions
• Compatibility with standard memory interfaces

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Low power consumption
• Compact package size
• Reliable performance
• Wide operating temperature range

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit of storage compared to alternative memory options

Working Principles

IS61WV51216EDBLL-8TLI-TR is based on static random access memory (SRAM) technology. It stores data using a network of flip-flops, which retain their state as long as power is supplied. The stored data can be accessed and modified at high speeds, making it suitable for applications that require frequent read and write operations.

Detailed Application Field Plans

IS61WV51216EDBLL-8TLI-TR finds applications in various electronic devices and systems, including: 1. Computers and laptops 2. Smartphones and tablets 3. Networking equipment 4. Automotive electronics 5. Industrial control systems 6. Medical devices 7. Consumer electronics

Detailed and Complete Alternative Models

Some alternative models to IS61WV51216EDBLL-8TLI-TR include: 1. MT48LC32M16A2P-75IT: 512K words x 16 bits SRAM, 3.3V, 8 ns access time. 2. AS6C4008-55PCN: 512K words x 16 bits SRAM, 5V, 55 ns access time. 3. CY62128ELL-45SXI: 512K words x 16 bits SRAM, 2.7V to 3.6V, 45 ns access time.

These alternative models offer similar functionality and can be used as substitutes depending on specific requirements and compatibility with the target system.

In conclusion, IS61WV51216EDBLL-8TLI