IS61WV5128BLL-10BI-TR

Product Overview

Category

IS61WV5128BLL-10BI-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Non-volatile memory
• Large storage capacity
• Reliable performance

Package

IS61WV5128BLL-10BI-TR is available in a compact package that ensures easy integration into various electronic devices. The package type may vary depending on the manufacturer.

Essence

The essence of IS61WV5128BLL-10BI-TR lies in its ability to store and retrieve digital information quickly and reliably, making it an essential component in modern electronic devices.

Packaging/Quantity

IS61WV5128BLL-10BI-TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of the product. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 512 kilobits (64 kilobytes)
• Operating Voltage: 3.3V
• Access Time: 10 nanoseconds
• Organization: 32K words x 16 bits
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS61WV5128BLL-10BI-TR is as follows:

1. Vcc (Power Supply)
2. WE (Write Enable)
3. OE (Output Enable)
4. A0-A14 (Address Inputs)
5. DQ0-DQ15 (Data Inputs/Outputs)
6. CE1, CE2 (Chip Enable)
7. UB/LB (Upper Byte/Lower Byte)
8. NC (No Connection)
9. GND (Ground)

Functional Features

• High-speed data access
• Low power consumption in standby mode
• Easy integration into various electronic devices
• Reliable performance in harsh operating conditions
• Compatibility with standard memory interfaces

Advantages and Disadvantages

Advantages

• Fast data access speed enhances overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Large storage capacity allows for the storage of a significant amount of data.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Higher cost compared to other types of memory technologies.
• Limited scalability in terms of capacity compared to newer memory technologies.
• Volatile memory requires constant power supply to retain stored data.

Working Principles

IS61WV5128BLL-10BI-TR operates based on the principles of static random access memory (SRAM). It uses flip-flops to store each bit of data, allowing for fast read and write operations. The stored data remains intact as long as power is supplied to the device.

Detailed Application Field Plans

IS61WV5128BLL-10BI-TR finds applications in various fields, including: - Computer systems - Networking equipment - Telecommunications devices - Consumer electronics - Automotive electronics - Industrial automation

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS61WV5128BLL-10BI-TR include: - IS61WV51216BLL-10BLI-TR - IS61WV102416BLL-10TLI-TR - IS61WV25616BLL-10TLI-TR - IS61WV102416BLL-10TLI-TR

These alternative models provide different storage capacities and may have slight variations in specifications, but they serve the same purpose as IS61WV5128BLL-10BI-TR.

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