IS62WV10248DBLL-55TLI-TR

Product Overview

Category

IS62WV10248DBLL-55TLI-TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Reliable performance
• Compact package size

Package

IS62WV10248DBLL-55TLI-TR is available in a small outline, thin profile (TSOP) package.

Essence

The essence of IS62WV10248DBLL-55TLI-TR lies in its ability to provide fast and efficient data storage in various electronic devices.

Packaging/Quantity

This product is typically packaged in reels or trays, with a quantity of 2500 units per reel/tray.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 1M words x 24 bits
• Operating Voltage: 2.7V - 3.6V
• Access Time: 55ns
• Standby Current: 10μA (typical)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS62WV10248DBLL-55TLI-TR is as follows:

1. Vcc
2. WE#
3. A0-A18
4. DQ0-DQ23
5. CE#
6. OE#
7. LB#
8. UB#
9. BYTE#
10. NC
11. GND

(Note: The above list represents only a subset of the total pins.)

Functional Features

• Easy interfacing with microcontrollers and other digital circuits
• Asynchronous operation for flexible data access
• Byte write and read capability for efficient memory utilization
• Automatic power-down mode to reduce power consumption during idle periods

Advantages and Disadvantages

Advantages

• High-speed operation enables quick data access
• Low power consumption prolongs battery life in portable devices
• Large storage capacity accommodates extensive data requirements
• Reliable performance ensures data integrity
• Compact package size allows for space-efficient integration

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond the specified storage capacity

Working Principles

IS62WV10248DBLL-55TLI-TR operates based on the principles of static random access memory. It stores data using flip-flop circuits, which retain information as long as power is supplied. The memory cells are organized into a matrix, with each cell storing one bit of data. Accessing data involves providing the appropriate address and control signals to select the desired memory location.

Detailed Application Field Plans

IS62WV10248DBLL-55TLI-TR finds applications in various fields, including:

1. Computers and laptops for main memory storage
2. Smartphones and tablets for fast data access
3. Industrial automation systems for reliable data storage
4. Automotive electronics for critical data retention
5. Medical devices for real-time data processing

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS62WV10248DBLL-55TLI-TR include:

1. MT45W8MW16BGX-701IT: 8M x 16-bit SRAM, 70ns access time
2. CY62167EV30LL-45BVXI: 16M x 16-bit SRAM, 45ns access time
3. AS6C4008-55BIN: 4M x 8-bit SRAM, 55ns access time
4. K6R4016V1D-UI10: 4M x 16-bit SRAM, 100ns access time

(Note: The above list represents only a subset of the available alternative models.)

In conclusion, IS62WV10248DBLL-55TLI-TR is a high-speed, low-power semiconductor memory device primarily used for data storage in various electronic devices. Its compact package size, large storage capacity, and reliable performance make it suitable for a wide range of applications. While it offers advantages such as fast operation and low power consumption, it also has limitations in terms of cost and scalability. Nonetheless, it remains a valuable component in the field of memory technology.