IS62WV12816ALL-70BI

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, non-volatile
• Package: Ball Grid Array (BGA)
• Essence: Non-volatile memory storage
• Packaging/Quantity: Bulk packaging, quantity varies

Specifications

• Model: IS62WV12816ALL-70BI
• Organization: 128K words x 16 bits
• Access Time: 70 nanoseconds
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: 20 years

Detailed Pin Configuration

The IS62WV12816ALL-70BI has a total of 48 pins. The pin configuration is as follows:

1. A0-A16: Address Inputs
2. DQ0-DQ15: Data Input/Output
3. WE#: Write Enable
4. OE#: Output Enable
5. CE#: Chip Enable
6. UB#/LB#: Upper/Lower Byte Control
7. VCC: Power Supply
8. GND: Ground

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption ensures energy efficiency.
• Non-volatile memory retains data even when power is disconnected.
• Wide operating temperature range makes it suitable for various environments.

Advantages

• Fast access time improves overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Non-volatile memory eliminates the need for constant data backup.
• Wide operating temperature range enables usage in extreme conditions.

Disadvantages

• Limited storage capacity compared to other memory devices.
• Higher cost per unit compared to some alternative models.
• Sensitive to electrostatic discharge (ESD) and requires proper handling.

Working Principles

The IS62WV12816ALL-70BI is based on the technology of static random-access memory (SRAM). It stores data using flip-flop circuits, which retain information as long as power is supplied. The memory cells are organized in a matrix, with each cell storing one bit of data. Accessing the memory involves providing the appropriate address to select the desired location and enabling the necessary control signals for reading or writing data.

Detailed Application Field Plans

The IS62WV12816ALL-70BI is commonly used in various electronic devices that require non-volatile memory storage. Some application fields include: 1. Embedded systems 2. Networking equipment 3. Industrial automation 4. Automotive electronics 5. Medical devices

Detailed and Complete Alternative Models

1. IS62WV12816BLL-55TLI: 128K words x 16 bits, 55 nanoseconds access time, low voltage operation.
2. IS62WV12816BLL-70TLI: 128K words x 16 bits, 70 nanoseconds access time, low voltage operation.
3. IS62WV12816BLL-85TLI: 128K words x 16 bits, 85 nanoseconds access time, low voltage operation.
4. IS62WV12816BLL-100TLI: 128K words x 16 bits, 100 nanoseconds access time, low voltage operation.

These alternative models offer similar functionality but may have different specifications and performance characteristics.

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