IS66WV51216EBLL-70TLI

Product Overview

Category

The IS66WV51216EBLL-70TLI belongs to the category of memory products.

Use

It is primarily used for storing and retrieving digital information in electronic devices.

Characteristics

• High storage capacity
• Fast data access speed
• Low power consumption
• Reliable performance

Package

The IS66WV51216EBLL-70TLI comes in a compact package suitable for integration into various electronic systems.

Essence

The essence of this product lies in its ability to provide efficient and reliable memory storage for electronic devices.

Packaging/Quantity

The IS66WV51216EBLL-70TLI is typically packaged individually and is available in various quantities depending on the customer's requirements.

Specifications

• Model: IS66WV51216EBLL-70TLI
• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 512 megabits (64 megabytes)
• Operating Voltage: 3.3V
• Speed: 70 nanoseconds (ns)
• Interface: Parallel
• Pin Count: 48 pins
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. WE#
27. OE#
28. CE#
29. UB#
30. LB#
31. BYTE#
32. NC
33. VSS
34. VSS
35. VSS
36. VSS
37. VSS
38. VSS
39. VSS
40. VSS
41. VSS
42. VSS
43. VSS
44. VSS
45. VSS
46. VSS
47. VCC
48. VCC

Functional Features

• Random access to stored data
• Non-volatile memory
• High-speed read and write operations
• Low power consumption in standby mode
• Easy integration into electronic systems

Advantages and Disadvantages

Advantages

• High storage capacity allows for storing large amounts of data
• Fast data access speed enables quick retrieval of information
• Low power consumption helps conserve energy in electronic devices
• Reliable performance ensures data integrity and system stability

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond the specified capacity
• Requires additional circuitry for interfacing with other components

Working Principles

The IS66WV51216EBLL-70TLI operates based on the principles of static random access memory (SRAM). It utilizes a combination of flip-flops and logic gates to store and retrieve digital information. The stored data remains intact as long as power is supplied to the device.

Detailed Application Field Plans

The IS66WV51216EBLL-70TLI finds applications in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. IS66WV25616EBLL-70TLI
2. IS66WV102416EBLL-70TLI
3. IS66WV204816EBLL-70TLI
4. IS66WV409616EBLL-70TLI

These alternative models offer different storage capacities while maintaining similar characteristics and functionality to the IS66WV51216EBLL-70TLI.

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