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IXFN20N120P

IXFN20N120P

Product Overview

Category

The IXFN20N120P belongs to the category of power MOSFETs.

Use

It is commonly used in high-power applications such as motor control, power supplies, and inverters.

Characteristics

  • High voltage and current handling capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate drive power requirement

Package

The IXFN20N120P is typically available in a TO-264 package.

Essence

The essence of the IXFN20N120P lies in its ability to efficiently handle high power levels while maintaining low losses.

Packaging/Quantity

It is usually packaged in tubes or trays and is available in quantities suitable for production runs.

Specifications

  • Voltage Rating: 1200V
  • Current Rating: 20A
  • RDS(ON): 0.2 Ohms
  • Gate Threshold Voltage: 4V
  • Total Gate Charge: 80nC
  • Diode Forward Voltage: 1.5V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IXFN20N120P typically has three pins: 1. Source (S) 2. Drain (D) 3. Gate (G)

Functional Features

  • High voltage blocking capability
  • Low conduction losses
  • Fast switching times
  • Enhanced thermal performance

Advantages

  • Suitable for high-power applications
  • Efficient power handling
  • Reduced heat dissipation
  • Fast response times

Disadvantages

  • Higher cost compared to lower power devices
  • Requires careful consideration of driving circuitry due to high voltage ratings

Working Principles

The IXFN20N120P operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the flow of current through the device. When a sufficient voltage is applied to the gate terminal, the device switches on, allowing current to flow from the source to the drain.

Detailed Application Field Plans

The IXFN20N120P is well-suited for use in various high-power applications, including: - Motor drives - Uninterruptible power supplies (UPS) - Renewable energy systems - Industrial power converters

Detailed and Complete Alternative Models

Some alternative models to the IXFN20N120P include: - IRFP4668PbF - FDPF20N60NZ - STW20NM60N

In conclusion, the IXFN20N120P power MOSFET offers high-performance characteristics suitable for demanding high-power applications, making it a valuable component in modern power electronics systems.

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قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق IXFN20N120P في الحلول التقنية

  1. What is the maximum voltage rating of IXFN20N120P?

    • The maximum voltage rating of IXFN20N120P is 1200V.
  2. What is the maximum current rating of IXFN20N120P?

    • The maximum current rating of IXFN20N120P is 20A.
  3. What is the on-state voltage drop of IXFN20N120P?

    • The on-state voltage drop of IXFN20N120P is typically around 2.2V at a current of 20A.
  4. What type of package does IXFN20N120P come in?

    • IXFN20N120P comes in a TO-268 package.
  5. What are the typical applications for IXFN20N120P?

    • IXFN20N120P is commonly used in applications such as motor drives, power supplies, and renewable energy systems.
  6. Does IXFN20N120P have built-in protection features?

    • Yes, IXFN20N120P has built-in overcurrent and short-circuit protection.
  7. What is the thermal resistance of IXFN20N120P?

    • The thermal resistance of IXFN20N120P is typically around 0.35°C/W.
  8. Can IXFN20N120P be used in high-frequency switching applications?

    • Yes, IXFN20N120P is suitable for high-frequency switching due to its fast switching characteristics.
  9. What is the operating temperature range of IXFN20N120P?

    • The operating temperature range of IXFN20N120P is -55°C to 150°C.
  10. Is IXFN20N120P RoHS compliant?

    • Yes, IXFN20N120P is RoHS compliant, making it suitable for environmentally friendly designs.