IXGA20N120B3

Product Overview

• Category: Power semiconductor device
• Use: High-power switching applications
• Characteristics: High voltage, high current, low on-state voltage drop, fast switching speed
• Package: TO-247
• Essence: Insulated Gate Bipolar Transistor (IGBT)
• Packaging/Quantity: Typically sold individually

Specifications

• Voltage Rating: 1200V
• Current Rating: 20A
• Maximum Operating Temperature: 150°C
• Gate-Emitter Voltage: ±20V
• Collector-Emitter Saturation Voltage: 1.7V
• Turn-On Delay Time: 18ns
• Turn-Off Delay Time: 75ns

Detailed Pin Configuration

• Pin 1: Collector
• Pin 2: Gate
• Pin 3: Emitter

Functional Features

• High voltage capability
• Low saturation voltage
• Fast switching speed
• High input impedance

Advantages and Disadvantages

Advantages

• Suitable for high-power applications
• Low power dissipation
• Fast switching speed reduces switching losses

Disadvantages

• Higher cost compared to traditional power transistors
• Requires careful handling due to sensitivity to overvoltage conditions

Working Principles

The IXGA20N120B3 is an IGBT, which combines the advantages of MOSFETs and BJTs. It operates by controlling the flow of current between the collector and emitter using a gate signal. When a positive voltage is applied to the gate, it allows current to flow, and when the gate signal is removed, the current flow ceases.

Detailed Application Field Plans

The IXGA20N120B3 is commonly used in various high-power applications such as: - Motor drives - Uninterruptible power supplies (UPS) - Renewable energy systems - Induction heating - Welding equipment

Detailed and Complete Alternative Models

• IXGA30N60C3: 600V, 30A IGBT
• IXGH25N120AU1: 1200V, 25A IGBT
• IXGN60N60C2D1: 600V, 60A IGBT

This information provides a comprehensive overview of the IXGA20N120B3, covering its specifications, features, application areas, and alternative models.

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