IXGH28N60B

Product Overview

• Category: Power semiconductor device
• Use: High-power switching applications
• Characteristics: High voltage, high current capability, fast switching speed
• Package: TO-247
• Essence: Power MOSFET
• Packaging/Quantity: Single unit packaging

Specifications

• Voltage Rating: 600V
• Current Rating: 28A
• RDS(ON): 0.19Ω
• Gate Charge: 110nC
• Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

The IXGH28N60B follows the standard pin configuration for a TO-247 package: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge
• Avalanche energy rated

Advantages and Disadvantages

Advantages

• Suitable for high-power applications
• Low conduction losses
• Fast switching performance

Disadvantages

• Higher gate drive requirements compared to lower voltage devices
• Higher cost compared to lower power devices

Working Principles

The IXGH28N60B operates based on the principles of metal-oxide-semiconductor field-effect transistors (MOSFETs). When a suitable voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IXGH28N60B is commonly used in the following applications: - Switch-mode power supplies - Motor drives - Inverters - Induction heating - Welding equipment

Detailed and Complete Alternative Models

• IRFP460: Similar voltage and current ratings
• STW20NK50Z: Comparable specifications and package type
• FGA60N65SMD: Alternative with similar characteristics and use

This comprehensive entry provides detailed information about the IXGH28N60B, including its product category, basic overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.