IXYS
قد تكون الصورة تمثيلية.
راجع المواصفات للحصول على تفاصيل المنتج.
IXGH28N60B3D1
عرض التفاصيل جداول البيانات

IXGH28N60B3D1

Product Overview

Category

The IXGH28N60B3D1 belongs to the category of power semiconductor devices.

Use

It is used in high-power applications such as motor drives, inverters, and power supplies.

Characteristics

  • High voltage and current capability
  • Low on-state voltage drop
  • Fast switching speed
  • Robust and reliable performance

Package

The IXGH28N60B3D1 is typically available in a TO-247 package.

Essence

This product is essential for controlling high power in various electronic systems.

Packaging/Quantity

It is usually packaged individually and sold in quantities suitable for industrial applications.

Specifications

  • Voltage Rating: 600V
  • Current Rating: 28A
  • Package Type: TO-247
  • Switching Speed: <100ns
  • On-State Voltage Drop: <2V

Detailed Pin Configuration

The IXGH28N60B3D1 has a standard TO-247 pin configuration with three pins: gate, drain, and source.

Functional Features

  • High voltage and current handling capacity
  • Fast switching speed for efficient power control
  • Low on-state voltage drop for reduced power loss
  • Robust construction for reliable operation in demanding environments

Advantages

  • Suitable for high-power applications
  • Efficient power control and management
  • Reliable performance under high-stress conditions

Disadvantages

  • Higher cost compared to lower power devices
  • Requires proper heat dissipation due to high power handling capability

Working Principles

The IXGH28N60B3D1 operates based on the principles of field-effect transistors, utilizing its high voltage and current handling capabilities to control power flow in electronic circuits.

Detailed Application Field Plans

The IXGH28N60B3D1 is commonly used in: - Motor drives for electric vehicles - Industrial power supplies - Renewable energy systems - High-power inverters for industrial machinery

Detailed and Complete Alternative Models

  • IXGH30N60C
  • IXGH40N60C
  • IXGH50N60C
  • IXGH60N60C

In conclusion, the IXGH28N60B3D1 is a high-power semiconductor device with robust characteristics and functional features that make it suitable for a wide range of high-power applications. Its efficient power control, fast switching speed, and reliable performance make it an essential component in modern electronic systems.

[Word count: 345]

قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق IXGH28N60B3D1 في الحلول التقنية

  1. What is the maximum voltage rating of IXGH28N60B3D1?

    • The maximum voltage rating of IXGH28N60B3D1 is 600V.

  2. What is the maximum continuous collector current of IXGH28N60B3D1?

    • The maximum continuous collector current of IXGH28N60B3D1 is 56A.

  3. What type of package does IXGH28N60B3D1 come in?

    • IXGH28N60B3D1 comes in a TO-247 package.

  4. What is the typical on-state voltage of IXGH28N60B3D1?

    • The typical on-state voltage of IXGH28N60B3D1 is 1.8V.

  5. What are the typical applications for IXGH28N60B3D1?

    • IXGH28N60B3D1 is commonly used in applications such as motor drives, inverters, and power supplies.

  6. Does IXGH28N60B3D1 have built-in protection features?

    • Yes, IXGH28N60B3D1 has built-in overcurrent and short-circuit protection.

  7. What is the maximum junction temperature of IXGH28N60B3D1?

    • The maximum junction temperature of IXGH28N60B3D1 is 150°C.

  8. Is IXGH28N60B3D1 suitable for high-frequency switching applications?

    • Yes, IXGH28N60B3D1 is suitable for high-frequency switching due to its fast switching characteristics.

  9. What is the gate charge of IXGH28N60B3D1?

    • The gate charge of IXGH28N60B3D1 is typically 110nC.

  10. Can IXGH28N60B3D1 be used in parallel configurations for higher current handling?

    • Yes, IXGH28N60B3D1 can be used in parallel configurations to increase current handling capability.