IXGR40N60C2G1

Product Overview

• Category: Power Semiconductor
• Use: High-power switching applications
• Characteristics: High voltage, high current capability
• Package: TO-247
• Essence: Insulated Gate Bipolar Transistor (IGBT)
• Packaging/Quantity: Single unit packaging

Specifications

• Voltage Rating: 600V
• Current Rating: 40A
• Switching Frequency: Up to 20kHz
• Operating Temperature: -55°C to 150°C
• Gate-Emitter Voltage: ±20V

Detailed Pin Configuration

The IXGR40N60C2G1 features a standard TO-247 pin configuration with three pins: collector, gate, and emitter.

Functional Features

• High voltage capability
• Low saturation voltage
• Fast switching speed
• Overcurrent protection

Advantages and Disadvantages

Advantages: - High power handling capability - Low on-state voltage drop - Fast switching times

Disadvantages: - High switching losses - Sensitivity to overvoltage conditions

Working Principles

The IXGR40N60C2G1 operates based on the principles of insulated gate bipolar transistor technology. When a positive voltage is applied to the gate terminal, it allows current to flow between the collector and emitter terminals, enabling high-power switching applications.

Detailed Application Field Plans

This IGBT is suitable for various high-power applications including: - Motor drives - Uninterruptible power supplies (UPS) - Renewable energy systems - Industrial welding equipment

Detailed and Complete Alternative Models

• IXGR30N60C2D1: Lower current rating (30A) version of the same IGBT
• IXGR50N60C2: Higher current rating (50A) version of the same IGBT
• IXGH40N60C2D1: Higher voltage rating (1200V) version of the same IGBT

This comprehensive entry provides an in-depth understanding of the IXGR40N60C2G1, covering its specifications, functional features, application field plans, and alternative models, making it a valuable resource for engineers and enthusiasts in the power semiconductor industry.