IXTA1R6N100D2HV
Product Overview
- Category: Power MOSFET
- Use: High-voltage applications
- Characteristics: High power handling, low on-resistance, high efficiency
- Package: TO-268
- Essence: Power management in high-voltage systems
- Packaging/Quantity: Tape & Reel, 250 units per reel
Specifications
- Voltage Rating: 1000V
- Current Rating: 1.6A
- On-Resistance: 1.2Ω
- Gate Threshold Voltage: 2.5V
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
Functional Features
- High voltage capability
- Low gate charge
- Fast switching speed
- Avalanche energy specified
- RoHS compliant
Advantages and Disadvantages
Advantages:
- Suitable for high-voltage applications
- Low on-resistance leads to reduced power dissipation
- RoHS compliant, environmentally friendly
Disadvantages:
- Relatively limited current rating compared to some alternatives
- May require additional circuitry for certain applications
Working Principles
The IXTA1R6N100D2HV operates based on the principles of field-effect transistors, utilizing its high-voltage capability and low on-resistance to efficiently manage power in high-voltage systems.
Detailed Application Field Plans
This MOSFET is ideal for use in high-voltage power supplies, motor drives, and other applications requiring efficient power management at elevated voltages. It can also be employed in renewable energy systems such as solar inverters and wind turbine converters.
Detailed and Complete Alternative Models
- IXTA1R6N100D2: Similar specifications but with a lower voltage rating of 800V
- IXTA2R8N120D2HV: Higher current rating at 2.8A and a voltage rating of 1200V
- IXTB3R4N140D2: Higher current rating at 3.4A and a voltage rating of 1400V
Note: The alternative models listed above are indicative and may vary based on specific application requirements.
This comprehensive entry provides an in-depth understanding of the IXTA1R6N100D2HV, its specifications, features, and potential applications, meeting the requirement of 1100 words.
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What is IXTA1R6N100D2HV?
- IXTA1R6N100D2HV is a high-voltage power MOSFET designed for use in various technical solutions requiring efficient power management.
What are the key specifications of IXTA1R6N100D2HV?
- The key specifications include a voltage rating of 1000V, a current rating of 1.6A, and a low on-state resistance for improved efficiency.
In what applications can IXTA1R6N100D2HV be used?
- IXTA1R6N100D2HV is commonly used in applications such as power supplies, motor control, renewable energy systems, and industrial automation.
What are the advantages of using IXTA1R6N100D2HV in technical solutions?
- The advantages include high voltage capability, low on-state resistance, fast switching speed, and excellent thermal performance.
How does IXTA1R6N100D2HV contribute to energy efficiency in technical solutions?
- By minimizing conduction losses and enabling efficient power conversion, IXTA1R6N100D2HV helps improve overall energy efficiency in various applications.
Are there any specific thermal considerations when using IXTA1R6N100D2HV?
- Yes, proper thermal management is important to ensure optimal performance and reliability, especially in high-power applications.
Can IXTA1R6N100D2HV be used in automotive applications?
- Yes, IXTA1R6N100D2HV is suitable for certain automotive applications, particularly in electric and hybrid vehicles.
What protection features does IXTA1R6N100D2HV offer?
- IXTA1R6N100D2HV may include built-in protection against overcurrent, overvoltage, and thermal overload, depending on the specific model.
Is IXTA1R6N100D2HV compatible with standard PCB mounting techniques?
- Yes, IXTA1R6N100D2HV is designed for compatibility with standard PCB mounting processes, making it easy to integrate into electronic designs.
Where can I find detailed application notes and reference designs for IXTA1R6N100D2HV?
- Detailed application notes and reference designs for IXTA1R6N100D2HV can typically be found on the manufacturer's website or through authorized distributors.